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Publications in Math-Net.Ru |
Citations |
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2019 |
1. |
M. B. Uspenskiy, “A survey of the approaches to storage systems fault detection”, St. Petersburg Polytechnical University Journal. Computer Science. Telecommunication and Control Sys, 12:4 (2019), 145–158 |
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2016 |
2. |
A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, Yu. V. Kurnyavko, A. V. Lobintsov, A. S. Meshkov, V. N. Penkin, V. I. Romantsevich, M. B. Uspenskiy, R. V. Chernov, “Analysis of reliability of semiconductor emitters with different designs of cavities”, Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 83–88 ; Tech. Phys., 61:10 (2016), 1525–1530 |
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2011 |
3. |
E. I. Davydova, V. V. Dmitriev, Yu. Yu. Kozlov, I. A. Kukushkin, M. B. Uspenskiy, V. A. Shishkin, “Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode”, Kvantovaya Elektronika, 41:5 (2011), 423–426 [Quantum Electron., 41:5 (2011), 423–426 ] |
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2010 |
4. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “Dual-wavelength laser diodes based on epitaxially stacked heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 697–699 [Quantum Electron., 40:8 (2010), 697–699 ] |
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5. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “808-nm laser diode bars based on epitaxially stacked double heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 682–684 [Quantum Electron., 40:8 (2010), 682–684 ] |
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6. |
A. A. Lobintsov, M. B. Uspenskiy, V. A. Shishkin, M. V. Shramenko, S. D. Yakubovich, “Highly efficient semiconductor optical amplifier for the 820—860-nm spectral range”, Kvantovaya Elektronika, 40:4 (2010), 305–309 [Quantum Electron., 40:4 (2010), 305–309 ] |
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2009 |
7. |
E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726 [Quantum Electron., 39:8 (2009), 723–726 ] |
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8. |
E. I. Davydova, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, A. V. Sukharev, M. B. Uspenskiy, V. A. Shishkin, “High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures”, Kvantovaya Elektronika, 39:1 (2009), 18–20 [Quantum Electron., 39:1 (2009), 18–20 ] |
3
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2005 |
9. |
A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin, “Effect of the energy of ion-chemical etching of GaAs/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As structures on photoluminescence and degradation of devices”, Kvantovaya Elektronika, 35:5 (2005), 445–448 [Quantum Electron., 35:5 (2005), 445–448 ] |
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2004 |
10. |
E. I. Davydova, A. V. Zubanov, A. A. Marmalyuk, M. B. Uspenskiy, V. A. Shishkin, “Single-mode ridge lasers fabricated in an inductively coupled plasma source”, Kvantovaya Elektronika, 34:9 (2004), 805–808 [Quantum Electron., 34:9 (2004), 805–808 ] |
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2002 |
11. |
V. V. Popovichev, E. I. Davydova, A. A. Marmalyuk, A. V. Simakov, M. B. Uspenskiy, A. A. Chel'nyi, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, “High-power single-transverse-mode ridge optical waveguide semiconductor lasers”, Kvantovaya Elektronika, 32:12 (2002), 1099–1104 [Quantum Electron., 32:12 (2002), 1099–1104 ] |
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2001 |
12. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
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1992 |
13. |
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960 ] |
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