E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726 [Quantum Electron., 39:8 (2009), 723

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Kvantovaya Elektronika, 2009, Volume 39, Number 8, Pages 723–726 (Mi qe14181)

This article is cited in 14 scientific papers (total in 14 papers)

Lasers

High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Full-text PDF (144 kB) Citations (14)

Abstract: Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt—ampere characteristic for a triple laser diode is 2.6 W A^-1. The frequency characteristics and temperature dependences of the optical power on the pump power demonstrate good homogeneity of the grown structures. Laser diodes based on the triple laser heterostructure (the stripe contact width is 200 μm and the cavity length is 1 mm) emit 80 W at 0.9 μm in the pulsed regime at the injection current of 40 A.

Received: 20.02.2009
Revised: 21.05.2009

English version:
Quantum Electronics, 2009, Volume 39, Issue 8, Pages 723–726
DOI: https://doi.org/10.1070/QE2009v039n08ABEH014181

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh

Language: Russian

Citation: E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726 [Quantum Electron., 39:8 (2009), 723–726]

Linking options:

https://www.mathnet.ru/eng/qe14181

https://www.mathnet.ru/eng/qe/v39/i8/p723

This publication is cited in the following 14 articles:

Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S405–S417
Yuliang Zhao, Guowen Yang, Yongming Zhao, Song Tang, Yu Lan, Yuxian Liu, Zhenfu Wang, Abdullah Demir, IEEE Photonics J., 14:6 (2022), 1
T. A. Bagaev, N. V. Gul'tikov, M. A. Ladugin, A. A. Marmalyuk, Yu. V. Kurnyavko, V. V. Krichevskii, A. M. Morozyuk, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. E. Kazakova, D. N. Romanovich, V. A. Kryuchkov, Quantum Electron., 51:10 (2021), 912–914
Zhao Yu., Wang Zh., Demir A., Yang G., Ma Sh., Xu B., Sun Ch., Li B., Qiu B., IEEE Photonics J., 13:3 (2021), 1500708
Quantum Electron., 50:11 (2020), 1001–1003
Quantum Electron., 49:10 (2019), 905–908
Quantum Electron., 49:11 (2019), 1011–1013
V. P. Konyaev, A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, M. V. Zverkov, Semiconductors, 48:1 (2014), 99
Quantum Electron., 43:9 (2013), 822–823
M. M. Zverev, N. A. Gamov, E. V. Zhdanova, M. A. Ladugin, A. A. Marmalyuk, D. V. Peregoudov, V. B. Studionov, Opt. Spectrosc, 111:2 (2011), 182
A. A. Marmalyuk, E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevsky, M. A. Ladugin, E. I. Lebedeva, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, N. A. Pikhtin, I. S. Tarasov, Semiconductors, 45:4 (2011), 519
Quantum Electron., 40:8 (2010), 697–699
Quantum Electron., 40:8 (2010), 682–684
Quantum Electron., 40:10 (2010), 855–857

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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