High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt—ampere characteristic for a triple laser diode is 2.6 W A^-1. The frequency characteristics and temperature dependences of the optical power on the pump power demonstrate good homogeneity of the grown structures. Laser diodes based on the triple laser heterostructure (the stripe contact width is 200 μm and the cavity length is 1 mm) emit 80 W at 0.9 μm in the pulsed regime at the injection current of 40 A.