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This article is cited in 1 scientific paper (total in 1 paper)
Diode lasers
Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices
A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
The process of ion-chemical etching of mesa-stripes in epitaxial GaAs/AlxGa1-xAs structures on a setup with an inductively coupled plasma source is studied. The advantage of the setup is a high plasma density in the etching area and, therefore, a low ion energy (100—200 eV), which can be varied independently of the RF power. The process is developed for forming narrow (3–5 μm) mesa-stripes with a side-wall tilt of ~85° and the scatter in the values of geometrical parameters equal to ±1% in the etching area of diameter 150 mm. It is shown that, unlike RF etching, the decrease in the photoluminescence intensity in GaAs/AlxGa1-xAs structures is stabilised at the 15%–20% level of the initial intensity even when the etching area is located only at a distance of 100–150 Å from the active region. Comparative tests are performed for ridge superluminescent diodes manufactured by using RF radiation sources and inductively coupled plasma.
Received: 13.04.2004 Revised: 08.10.2004
Citation:
A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin, “Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices”, Kvantovaya Elektronika, 35:5 (2005), 445–448 [Quantum Electron., 35:5 (2005), 445–448]
Linking options:
https://www.mathnet.ru/eng/qe2691 https://www.mathnet.ru/eng/qe/v35/i5/p445
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