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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
V. I. Kozlovsky, S. M. Zhenishbekov, Ya. K. Skasyrsky, M. P. Frolov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Marmalyuk, “Study of a semiconductor disk laser with a wavelength of 780 nm based on a heterostructure with
Al<sub>x</sub>Ga<sub>1-x</sub>As/Al<sub>y</sub>Ga<sub>1-y</sub>As quantum wells under optical pumping with different radiation wavelengths”, Kvantovaya Elektronika, 53:8 (2023), 636–640  [Bull. Lebedev Physics Institute, 50:suppl. 12 (2023), S1348–S1355] |
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2022 |
| 2. |
M. R. Butaev, Ya. K. Skasyrsky, V. I. Kozlovsky, A. Yu. Andreev, I. V. Yarotskaya, A. A. Marmalyuk, “Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al<sub>x</sub>Ga<sub>1–x</sub>As/Al<sub>y</sub>Ga<sub>1–y</sub>As heterostructure with optical and electron beam pumping”, Kvantovaya Elektronika, 52:4 (2022), 362–366 [Quantum Electron., 52:4 (2022), 362–366  ] |
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| 3. |
N. A. Volkov, K. Yu. Telegin, N. V. Gultikov, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, L. I. Shestak, A. A. Kozyrev, V. A. Panarin, “Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)”, Kvantovaya Elektronika, 52:2 (2022), 179–181 [Quantum Electron., 52:2 (2022), 179–181  ] |
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2021 |
| 4. |
A. V. Babichev, A. G. Gladyshev, D. V. Denisov, V. V. Dyudelev, D. A. Mikhailov, S. O. Slipchenko, A. V. Lyutetskiy, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Andreev, I. V. Yarotskaya, K. A. Podgaetskii, A. A. Marmalyuk, A. A. Padalitsa, M. A. Ladugin, N. A. Pikhtin, G. S. Sokolovskii, A. Yu. Egorov, “Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 46–50  |
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| 5. |
N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Kvantovaya Elektronika, 51:10 (2021), 905–908 [Quantum Electron., 51:10 (2021), 905–908 ] |
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| 6. |
N. A. Volkov, V. N. Svetogorov, Yu. L. Ryaboshtan, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides”, Kvantovaya Elektronika, 51:4 (2021), 283–286 [Quantum Electron., 51:4 (2021), 283–286 ] |
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| 7. |
N. A. Volkov, A. Yu. Andreev, I. V. Yarotskaya, Yu. L. Ryaboshtan, V. N. Svetogorov, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide”, Kvantovaya Elektronika, 51:2 (2021), 133–136 [Quantum Electron., 51:2 (2021), 133–136 ] |
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2020 |
| 8. |
K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 50:5 (2020), 489–492 [Quantum Electron., 50:5 (2020), 489–492 ] |
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2019 |
| 9. |
A. Yu. Andreev, T. A. Bagaev, M. R. Butaev, N. A. Gamov, E. V. Zhdanova, M. M. Zverev, V. I. Kozlovsky, Ya. K. Skasyrsky, I. V. Yarotskaya, “Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure”, Kvantovaya Elektronika, 49:10 (2019), 909–912 [Quantum Electron., 49:10 (2019), 909–912 ] |
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2013 |
| 10. |
A. A. Marmalyuk, M. A. Ladugin, A. Yu. Andreev, K. Yu. Telegin, I. V. Yarotskaya, A. S. Meshkov, V. P. Konyaev, S. M. Sapozhnikov, E. I. Lebedeva, V. A. Simakov, “AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability”, Kvantovaya Elektronika, 43:10 (2013), 895–897 [Quantum Electron., 43:10 (2013), 895–897 ] |
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| 11. |
N. S. Degtyareva, S. A. Kondakov, G. T. Mikayelyan, P. V. Gorlachuk, M. A. Ladugin, A. A. Marmalyuk, Yu. L. Ryaboshtan, I. V. Yarotskaya, “High-power cw laser bars of the 750 – 790-nm wavelength range”, Kvantovaya Elektronika, 43:6 (2013), 509–511 [Quantum Electron., 43:6 (2013), 509–511 ] |
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2012 |
| 12. |
A. A. Marmalyuk, M. A. Ladugin, I. V. Yarotskaya, V. A. Panarin, G. T. Mikaelyan, “Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures”, Kvantovaya Elektronika, 42:1 (2012), 15–17 [Quantum Electron., 42:1 (2012), 15–17 ] |
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2010 |
| 13. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “Dual-wavelength laser diodes based on epitaxially stacked heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 697–699 [Quantum Electron., 40:8 (2010), 697–699 ] |
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| 14. |
E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “808-nm laser diode bars based on epitaxially stacked double heterostructures”, Kvantovaya Elektronika, 40:8 (2010), 682–684 [Quantum Electron., 40:8 (2010), 682–684 ] |
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2024 |
| 15. |
V. V. Dudelev, E. D. Cherotchenko, I. I. Vrubel, D. A. Mikhailov, D. V. Chistyakov, V. Yu. Mylnikov, S. N. Losev, E. A. Kognovitskaya, A. V. Babichev, A. V. Lutetskiy, S. O. Slipchenko, N. A. Pikhtin, A. G. Gladyshev, K. A. Podgaetskiy, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Marmalyuk, I. I. Novikov, V. I. Kuchinskii, L. Ya. Karachinsky, A. Yu. Egorov, G. S. Sokolovskii, “Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis”, UFN, 194:1 (2024), 98–105 ; Phys. Usp., 67:1 (2024), 92–98 |
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