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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlxGa1–xAs/AlyGa1–yAs heterostructure with optical and electron beam pumping
M. R. Butaevab, Ya. K. Skasyrskya, V. I. Kozlovskyab, A. Yu. Andreevc, I. V. Yarotskayac, A. A. Marmalyukc a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b National Research Nuclear University "MEPhI", Moscow
c OJSC M. F. Stel'makh Polyus Research Institute, Moscow
Abstract:
A pulsed semiconductor disk laser based on the AlxGa1–xAs/AlyGa1–yAs structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10%, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2% and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.
Keywords:
semiconductor disk laser, AlxGa1–xAs/AlyGa1–yAs structure, quantum well, electron beam, optical pumping, MOCVD.
Received: 23.12.2021 Accepted: 23.12.2021
Citation:
M. R. Butaev, Ya. K. Skasyrsky, V. I. Kozlovsky, A. Yu. Andreev, I. V. Yarotskaya, A. A. Marmalyuk, “Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlxGa1–xAs/AlyGa1–yAs heterostructure with optical and electron beam pumping”, Kvantovaya Elektronika, 52:4 (2022), 362–366 [Quantum Electron., 52:4 (2022), 362–366]
Linking options:
https://www.mathnet.ru/eng/qe18017 https://www.mathnet.ru/eng/qe/v52/i4/p362
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