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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
A. Yu. Andreeva, T. A. Bagaeva, M. R. Butaevbc, N. A. Gamovd, E. V. Zhdanovad, M. M. Zverevdb, V. I. Kozlovskybc, Ya. K. Skasyrskyb, I. V. Yarotskayaa a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
c National Engineering Physics Institute "MEPhI", Moscow
d MIREA — Russian Technological University, Moscow
Abstract:
We report the results of a study of an e-beam pumped vertical-external-cavity surface-emitting laser (VECSEL) based on an InGaAs/AlGaAs heterostructure. Metalorganic chemical vapour deposition (MOCVD) is employed to grow two structures of different design, which contain 10 quantum wells (QWs) and a built-in distributed Bragg reflector (DBR) mirror. Under repetitively pulsed electron-beam excitation (50 Hz, 250 ns), a peak output power of 5.5 W is achieved at a wavelength of 2.5 W and an output power of 2.5 W at 1.013 μm with a total convergence angle no larger than 20 mrad.
Keywords:
VECSEL, InGaAs/AlGaAs MQW heterostructure with a DBR mirror, e-beam pumping.
Received: 23.05.2019
Citation:
A. Yu. Andreev, T. A. Bagaev, M. R. Butaev, N. A. Gamov, E. V. Zhdanova, M. M. Zverev, V. I. Kozlovsky, Ya. K. Skasyrsky, I. V. Yarotskaya, “Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure”, Kvantovaya Elektronika, 49:10 (2019), 909–912 [Quantum Electron., 49:10 (2019), 909–912]
Linking options:
https://www.mathnet.ru/eng/qe17132 https://www.mathnet.ru/eng/qe/v49/i10/p909
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