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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1384–1389   ; Semiconductors, 52:11 (2018), 1495–1499 |
| 2. |
P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, A. A. Marmalyuk, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers”, Kvantovaya Elektronika, 48:6 (2018), 495–501 [Quantum Electron., 48:6 (2018), 495–501   ] |
11
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| 3. |
I. I. Zasavitskii, N. Yu. Kovbasa, N. A. Raspopov, A. V. Lobintsov, Yu. V. Kurnyavko, P. V. Gorlachuk, A. B. Krysa, D. G. Revin, “A GaInAs/AlInAs quantum cascade laser with an emission wavelength of 5.6 μm”, Kvantovaya Elektronika, 48:5 (2018), 472–475 [Quantum Electron., 48:5 (2018), 472–475 ] |
4
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| 4. |
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 48:3 (2018), 197–200 [Quantum Electron., 48:3 (2018), 197–200 ] |
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2017 |
| 5. |
A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 47:3 (2017), 272–274 [Quantum Electron., 47:3 (2017), 272–274 ] |
25
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2016 |
| 6. |
I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al<sub>0.45</sub>Ga<sub>0.55</sub>As heteropair grown by MOCVD”, Kvantovaya Elektronika, 46:5 (2016), 447–450 [Quantum Electron., 46:5 (2016), 447–450 ] |
4
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2014 |
| 7. |
P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm”, Kvantovaya Elektronika, 44:2 (2014), 149–156 [Quantum Electron., 44:2 (2014), 149–156 ] |
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2013 |
| 8. |
P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures”, Kvantovaya Elektronika, 43:9 (2013), 822–823 [Quantum Electron., 43:9 (2013), 822–823 ] |
2
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| 9. |
P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm”, Kvantovaya Elektronika, 43:9 (2013), 819–821 [Quantum Electron., 43:9 (2013), 819–821 ] |
2
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| 10. |
N. S. Degtyareva, S. A. Kondakov, G. T. Mikayelyan, P. V. Gorlachuk, M. A. Ladugin, A. A. Marmalyuk, Yu. L. Ryaboshtan, I. V. Yarotskaya, “High-power cw laser bars of the 750 – 790-nm wavelength range”, Kvantovaya Elektronika, 43:6 (2013), 509–511 [Quantum Electron., 43:6 (2013), 509–511 ] |
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