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Kvantovaya Elektronika, 2013, Volume 43, Number 9, Pages 822–823 (Mi qe15283)  

This article is cited in 2 scientific papers (total in 2 papers)

Lasers

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov

Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Full-text PDF (392 kB) Citations (2)
References:
Abstract: This paper describes 1.55-μm pulsed laser diode bars based on epitaxially stacked double AlGaInAs/InP heterostructures. The output power of such bars is 1.8 times that of singleheterostructure laser diode bars. We present the key characteristics of the laser sources.
Keywords: metal-organic vapour phase epitaxy, laser diode bars, epitaxial stacking.
Received: 17.07.2013
Revised: 26.07.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 9, Pages 822–823
DOI: https://doi.org/10.1070/QE2013v043n09ABEH015283
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh, 78.66.Fd
Language: Russian


Citation: P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures”, Kvantovaya Elektronika, 43:9 (2013), 822–823 [Quantum Electron., 43:9 (2013), 822–823]
Linking options:
  • https://www.mathnet.ru/eng/qe15283
  • https://www.mathnet.ru/eng/qe/v43/i9/p822
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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