|
This article is cited in 2 scientific papers (total in 2 papers)
Lasers
1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures
P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Abstract:
This paper describes 1.55-μm pulsed laser diode bars based on epitaxially stacked double AlGaInAs/InP heterostructures. The output power of such bars is 1.8 times that of singleheterostructure laser diode bars. We present the key characteristics of the laser sources.
Keywords:
metal-organic vapour phase epitaxy, laser diode bars, epitaxial stacking.
Received: 17.07.2013 Revised: 26.07.2013
Citation:
P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures”, Kvantovaya Elektronika, 43:9 (2013), 822–823 [Quantum Electron., 43:9 (2013), 822–823]
Linking options:
https://www.mathnet.ru/eng/qe15283 https://www.mathnet.ru/eng/qe/v43/i9/p822
|
Statistics & downloads: |
Abstract page: | 304 | Full-text PDF : | 114 | References: | 41 | First page: | 14 |
|