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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.
Keywords:
power – current characteristic, spectral range 1.5 – 1.55 μm, thermal resistance, radiative and nonradiative carrier recombination.
Received: 05.06.2013 Revised: 21.06.2013
Citation:
P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm”, Kvantovaya Elektronika, 44:2 (2014), 149–156 [Quantum Electron., 44:2 (2014), 149–156]
Linking options:
https://www.mathnet.ru/eng/qe15251 https://www.mathnet.ru/eng/qe/v44/i2/p149
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Abstract page: | 347 | Full-text PDF : | 204 | References: | 32 | First page: | 13 |
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