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Kvantovaya Elektronika, 2014, Volume 44, Number 2, Pages 149–156 (Mi qe15251)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers

Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Full-text PDF (677 kB) Citations (6)
References:
Abstract: We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.
Keywords: power – current characteristic, spectral range 1.5 – 1.55 μm, thermal resistance, radiative and nonradiative carrier recombination.
Received: 05.06.2013
Revised: 21.06.2013
English version:
Quantum Electronics, 2014, Volume 44, Issue 2, Pages 149–156
DOI: https://doi.org/10.1070/QE2014v044n02ABEH015251
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Language: Russian


Citation: P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm”, Kvantovaya Elektronika, 44:2 (2014), 149–156 [Quantum Electron., 44:2 (2014), 149–156]
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  • https://www.mathnet.ru/eng/qe15251
  • https://www.mathnet.ru/eng/qe/v44/i2/p149
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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