Abstract:
We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.
Keywords:
power – current characteristic, spectral range 1.5 – 1.55 μm, thermal resistance, radiative and nonradiative carrier recombination.
Citation:
P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm”, Kvantovaya Elektronika, 44:2 (2014), 149–156 [Quantum Electron., 44:2 (2014), 149–156]
Linking options:
https://www.mathnet.ru/eng/qe15251
https://www.mathnet.ru/eng/qe/v44/i2/p149
This publication is cited in the following 6 articles:
Alexander A. Bortsov, Yuri B. Il'in, Sergey M. Smolskiy, Springer Series in Optical Sciences, 232, Laser Optoelectronic Oscillators, 2020, 367
Alexander A. Bortsov, Yuri B. Il'in, Sergey M. Smolskiy, Springer Series in Optical Sciences, 232, Laser Optoelectronic Oscillators, 2020, 15
Alexander A. Bortsov, Yuri B. Il'in, Sergey M. Smolskiy, Springer Series in Optical Sciences, 232, Laser Optoelectronic Oscillators, 2020, 1