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Kvantovaya Elektronika, 2013, Volume 43, Number 9, Pages 819–821 (Mi qe15284)  

This article is cited in 2 scientific papers (total in 2 papers)

Lasers

High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov

Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Full-text PDF (253 kB) Citations (2)
References:
Abstract: This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5 – 1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.
Keywords: metal-organic vapour phase epitaxy, laser diode, spectral range 1.5 – 1.6 μm.
Received: 17.07.2013
Revised: 26.07.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 9, Pages 819–821
DOI: https://doi.org/10.1070/QE2013v043n09ABEH015284
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh, 42.79.Gn
Language: Russian


Citation: P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm”, Kvantovaya Elektronika, 43:9 (2013), 819–821 [Quantum Electron., 43:9 (2013), 819–821]
Linking options:
  • https://www.mathnet.ru/eng/qe15284
  • https://www.mathnet.ru/eng/qe/v43/i9/p819
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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