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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
A. V. Belonovskii, V. P. Evtikhiev, M. I. Mitrofanov, V. V. Nikolaev, “Strong coupling of exciton in organic material and plasmonic WGM localized on the surface of silver nanoparticles”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 14–15  ; JETP Letters, 118:1 (2023), 21–25 |
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2022 |
| 2. |
E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, “Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022), 611–612 ; JETP Letters, 115:10 (2022), 574–580  |
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2021 |
| 3. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dyudelev, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade laser with radiation output through a textured layer”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1081–1085  ; Semiconductors, 56:1 (2022), 1–4 |
| 4. |
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskiy, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov, “Surface emitting quantum-cascade ring laser”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 602–606 ; Semiconductors, 55:7 (2021), 591–594 |
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| 5. |
A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maksimov, S. Breuer, “Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 51–54 |
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2020 |
| 6. |
M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1390 ; Semiconductors, 54:12 (2020), 1682–1684 |
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| 7. |
A. V. Belonovski, G. R. Pozina, Ya. V. Levitskii, K. M. Morozov, M. I. Mitrofanov, E. I. Girshova, K. A. Ivanov, S. N. Rodin, V. P. Evtikhiev, M. A. Kaliteevskii, “Strong coupling of excitons in hexagonal GaN microcavities”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 85–88 ; Semiconductors, 54:1 (2020), 127–130 |
1
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| 8. |
A. V. Babichev, D. A. Pashnev, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, L. Ya. Karachinsky, I. I. Novikov, M. I. Mitrofanov, V. P. Evtikhiev, D. A. Firsov, L. E. Vorob'ev, N. A. Pikhtin, A. Yu. Egorov, “Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 8–11 ; Tech. Phys. Lett., 46:4 (2020), 312–315 |
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2019 |
| 9. |
S. N. Rodin, V. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev, M. A. Kaliteevski, “GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography”, Fizika Tverdogo Tela, 61:12 (2019), 2333 ; Phys. Solid State, 61:12 (2019), 2335–2337 |
| 10. |
Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolaev, M. N. Mizerov, V. P. Evtikhiev, “Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1579–1583 ; Semiconductors, 53:11 (2019), 1545–1549 |
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2018 |
| 11. |
V. V. Lundin, A. F. Tsatsul'nikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, Ya. V. Levitskii, V. P. Evtikhiev, “Selective epitaxial growth of III–N structures using ion-beam nanolithography”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1237–1243 ; Semiconductors, 52:10 (2018), 1357–1362 |
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| 12. |
M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev, “Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 816–818 ; Semiconductors, 52:7 (2018), 954–956 |
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2017 |
| 13. |
S. A. Masalov, E. O. Popov, A. G. Kolosko, S. V. Filippov, V. P. Ulin, V. P. Evtikhiev, A. V. Atrashchenko, “Liquid-metal field electron source based on porous GaP”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1416–1422 ; Tech. Phys., 62:9 (2017), 1424–1430 |
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2012 |
| 14. |
G. V. Benemanskaya, M. N. Lapushkin, V. P. Evtikhiev, A. S. Shkolnikov, “Photoemission from InAs/GaAs quantum dots decorated with cesium adatoms”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:5 (2012), 363–366 ; JETP Letters, 96:5 (2012), 332–335  |
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1992 |
| 15. |
B. Ya. Ber, V. P. Evtikhiev, A. B. Komissarov, A. O. Kosogov, D. A. Zushinskii, “MOLECULAR-BEAM EPITAXY (MBE) OF GAAS AND (AL,GA)AS ON UNORIENTED
GAAS(100) SUBSTRATES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:11 (1992), 72–76 |
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1990 |
| 16. |
P. N. Brunkov, V. P. Evtikhiev, S. G. Konnikov, E. Yu. Kotelnikov, M. G. Papentsev, M. M. Sobolev, “Обнаружение нового метастабильного уровня $DX$-центра в тонких
легированных Si слоях Al$_{x}$Ga$_{1-x}$As”, Fizika i Tekhnika Poluprovodnikov, 24:11 (1990), 1978–1982 |
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1989 |
| 17. |
V. P. Evtikhiev, P. S. Kop'ev, M. Y. Nadtochii, V. M. Ustinov, “Особенности эффекта устойчивой фотопроводимости в селективно
легированных двойных гетероструктурах
GaAs/$n$-(Al, Ga)As”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 845–848 |
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1988 |
| 18. |
Zh. I. Alferov, D. Z. Garbuzov, A. G. Denisov, V. P. Evtikhiev, A. B. Komissarov, A. P. Senichkin, V. N. Skorokhodov, V. E. Tokranov, “Квантово-размерные AlGaAs/GaAs-гетероструктуры со
100%-м квантовым
выходом излучательной рекомбинации, полученные методом молекулярно-пучковой
эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2105–2110 |
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1986 |
| 19. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, V. V. Krasovskii, A. E. Svetlokuzev, A. V. Chudinov, “Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 708–712 |
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1985 |
| 20. |
I. S. Tarasov, D. Z. Garbuzov, V. P. Evtikhiev, A. V. Ovchinnikov, Z. N. Sokolova, A. V. Chudinov, “Special Features of Temperature Dependence of Thresholds in
InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation
and Thin Active Region”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1496–1498 |
| 21. |
V. P. Evtikhiev, D. Z. Garbuzov, Z. N. Sokolova, I. S. Tarasov, V. B. Khalfin, V. P. Chalyi, A. V. Chudinov, “Special Features of Threshold Characteristics of InGaAsP/InP DH
Lasers (${\lambda=1.3}\,\mu m$) with Separate
Limitation and Superthin Active
Regions”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1420–1423 |
| 22. |
D. Z. Garbuzov, V. P. Evtikhiev, S. Yu. Karpov, Z. N. Sokolova, V. B. Khalfin, “Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 449–455 |
| 23. |
Zh. I. Alferov, D. Z. Garbuzov, A. V. Ovchinnikov, I. S. Tarasov, V. P. Evtikhiev, A. B. Nivin, A. E. Svetlokuzev, “Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1157–1162 |
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1984 |
| 24. |
Z. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, O. V. Sulima, V. P. Chalyi, A. V. Chudinov, “Инжекционные РО InGaAsP/InP ДГС лазеры с порогом
$300\,\text{А/см}^{2}$ (четырехсколотые образцы,
${\lambda=1.25}$ мкм, ${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2057–2060 |
| 25. |
D. Z. Garbuzov, I. N. Arsent'ev, V. P. Chalyi, A. V. Chudinov, V. P. Evtikhiev, V. B. Khalfin, “Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС
с тонкой активной областью
(${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом
жидкостной эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2041–2045 |
| 26. |
D. Z. Garbuzov, A. V. Chudinov, V. V. Agaev, V. P. Chalyi, V. P. Evtikhiev, “Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under
Optical Excitation”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 102–108 |
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1983 |
| 27. |
V. P. Evtikhiev, D. Z. Garbuzov, V. V. Agaev, V. B. Khalfin, V. P. Chalyi, “Форма краевой полосы в InGaAsP/InP ДГС (${\tau= 1.3}$ мкм)
при низком и высоком уровне фотовозбуждения”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1652–1655 |
| 28. |
V. P. Evtikhiev, D. Z. Garbuzov, A. T. Gorelenok, “Сравнение краев поглощения в бинарных и многокомпонентных прямозонных
соединениях A$^{\text{III}}$B$^{\text{V}}$ на основе
системы InGaAsP”, Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1402–1405 |
| 29. |
A. V. Chudinov, V. P. Chalyi, D. Z. Garbuzov, I. N. Arsent'ev, V. P. Evtikhiev, “Фотолюминесцентные исследования перераспределения неравновесных
носителей заряда в InGaAsP/InP с двумя активными областями”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 714–717 |
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