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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7, Pages 816–818
DOI: https://doi.org/10.21883/FTP.2018.07.46058.8797 (Mi phts5796) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching

M. I. Mitrofanovab, Ya. V. Levitskiiab, G. V. Voznyukc, E. E. Tatarinovc, S. N. Rodinab, M. A. Kaliteevskiiacd, V. P. Evtikhieva

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (314 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.07.46058.8797
Abstract: In the Si$_3$N$_4$ layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.
Funding agency Grant number
Russian Science Foundation 16-12-10503
Received: 18.12.2017
Accepted: 18.12.2017
English version:
Semiconductors, 2018, Volume 52, Issue 7, Pages 954–956
DOI: https://doi.org/10.1134/S1063782618070151
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev, “Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 816–818; Semiconductors, 52:7 (2018), 954–956
Citation in format AMSBIB
\Bibitem{MitLevVoz18}
\by M.~I.~Mitrofanov, Ya.~V.~Levitskii, G.~V.~Voznyuk, E.~E.~Tatarinov, S.~N.~Rodin, M.~A.~Kaliteevskii, V.~P.~Evtikhiev
\paper Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 7
\pages 816--818
\mathnet{http://mi.mathnet.ru/phts5796}
\crossref{https://doi.org/10.21883/FTP.2018.07.46058.8797}
\elib{https://elibrary.ru/item.asp?id=35269418}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 7
\pages 954--956
\crossref{https://doi.org/10.1134/S1063782618070151}
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  • https://www.mathnet.ru/eng/phts/v52/i7/p816
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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