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This article is cited in 1 scientific paper (total in 1 paper)
OPTICS AND NUCLEAR PHYSICS
Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity
E. I. Girshovaa, G. Pozinab, A. V. Belonovskiia, M. I. Mitrofanovcd, I. V. Levitskiidc, G. V. Voznyuka, V. P. Evtikhievb, S. N. Rodincd, M. A. Kaliteevskiia a ITMO University, 197101 St. Petersburg, Russia
b Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden
c Ioffe Institute, 194021 St. Petersburg, Russia
d Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences,
194021 St. Petersburg, Russia
Received: 05.04.2022 Revised: 12.04.2022 Accepted: 13.04.2022
Citation:
E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, “Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022), 611–612; JETP Letters, 115:10 (2022), 574–580
Linking options:
https://www.mathnet.ru/eng/jetpl6670 https://www.mathnet.ru/eng/jetpl/v115/i10/p611
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