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This article is cited in 2 scientific papers (total in 2 papers)
Physical electronics
Liquid-metal field electron source based on porous GaP
S. A. Masalova, E. O. Popova, A. G. Koloskoa, S. V. Filippova, V. P. Ulina, V. P. Evtikhieva, A. V. Atrashchenkob a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with high-voltage pulses in a vacuum has made it possible to obtain stable structures on its surface in the form of discrete gallium clusters. These structures exhibit high emission properties, including stable currents at a level of a few microamperes, as well as the high uniformity of the distribution of emission nanocenters over the surface.
Received: 16.02.2017
Citation:
S. A. Masalov, E. O. Popov, A. G. Kolosko, S. V. Filippov, V. P. Ulin, V. P. Evtikhiev, A. V. Atrashchenko, “Liquid-metal field electron source based on porous GaP”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1416–1422; Tech. Phys., 62:9 (2017), 1424–1430
Linking options:
https://www.mathnet.ru/eng/jtf6138 https://www.mathnet.ru/eng/jtf/v87/i9/p1416
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Abstract page: | 49 | Full-text PDF : | 22 |
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