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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1579–1583
DOI: https://doi.org/10.21883/FTP.2019.11.48459.9146 (Mi phts5368) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching

Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolaev, M. N. Mizerov, V. P. Evtikhiev

Ioffe Institute, St. Petersburg
Full-text PDF (586 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2019.11.48459.9146
Abstract: The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
Keywords: focused ion beam, direct ion lithography, nanolithography, radiation defects, annealing, microphotoluminescence.
Funding agency Grant number
Russian Science Foundation 16-12-10503
We are grateful to the Russian Science Foundation (grant no. 16-12-10503).
Received: 22.04.2019
Revised: 11.05.2019
Accepted: 13.05.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1545–1549
DOI: https://doi.org/10.1134/S1063782619110101
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolaev, M. N. Mizerov, V. P. Evtikhiev, “Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1579–1583; Semiconductors, 53:11 (2019), 1545–1549
Citation in format AMSBIB
\Bibitem{LevMitVoz19}
\by Ya.~V.~Levitskii, M.~I.~Mitrofanov, G.~V.~Voznyuk, D.~N.~Nikolaev, M.~N.~Mizerov, V.~P.~Evtikhiev
\paper Changes in the photoluminescence properties of semiconductor heterostructures after ion-beam etching
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1579--1583
\mathnet{http://mi.mathnet.ru/phts5368}
\crossref{https://doi.org/10.21883/FTP.2019.11.48459.9146}
\elib{https://elibrary.ru/item.asp?id=41300663}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1545--1549
\crossref{https://doi.org/10.1134/S1063782619110101}
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  • https://www.mathnet.ru/eng/phts/v53/i11/p1579
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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