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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 85–88
DOI: https://doi.org/10.21883/FTP.2020.01.48780.9257
(Mi phts5312)
 

This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Strong coupling of excitons in hexagonal GaN microcavities

A. V. Belonovskiab, G. R. Pozinac, Ya. V. Levitskiibd, K. M. Morozovab, M. I. Mitrofanovd, E. I. Girshovaabd, K. A. Ivanovb, S. N. Rodind, V. P. Evtikhievd, M. A. Kaliteevskiiabd

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Linköping University, Linköping, Sweden
d Ioffe Institute, St. Petersburg
Full-text PDF (484 kB) Citations (1)
Abstract: The GaN planar hexagonal microcavities were grown by a selective vapor phase epitaxy. The spectra were measured by the low-temperature cathodoluminescence method in-situ scanning electron microscope. The obtained spectra show a huge Rabi splitting (in order of 100 meV). Numerical simulation of the spatial distribution of the modes' intensities of a hexagonal resonator is shown. Some modes can have strong spatial localization, leading to strong coupling with the exciton and huge Rabi splitting. Theoretically, we calculated the fraction of excitons in polariton modes, which correlates with the intensity of exciton radiation associated with these modes, for microcavities of a hexagonal shape. Thus, we have obtained the form of the dependence of the radiation probability on the eigenfrequencies of the structure.
Keywords: rabi splitting, exciton, GaN, microcavity.
Funding agency Grant number
Russian Science Foundation 16-12-10503
The study was supported by the Russian Science Foundation, project no. 16-12-10503.
Received: 16.09.2019
Revised: 20.09.2019
Accepted: 20.09.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 127–130
DOI: https://doi.org/10.1134/S1063782620010042
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Belonovski, G. R. Pozina, Ya. V. Levitskii, K. M. Morozov, M. I. Mitrofanov, E. I. Girshova, K. A. Ivanov, S. N. Rodin, V. P. Evtikhiev, M. A. Kaliteevskii, “Strong coupling of excitons in hexagonal GaN microcavities”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 85–88; Semiconductors, 54:1 (2020), 127–130
Citation in format AMSBIB
\Bibitem{BelPozLev20}
\by A.~V.~Belonovski, G.~R.~Pozina, Ya.~V.~Levitskii, K.~M.~Morozov, M.~I.~Mitrofanov, E.~I.~Girshova, K.~A.~Ivanov, S.~N.~Rodin, V.~P.~Evtikhiev, M.~A.~Kaliteevskii
\paper Strong coupling of excitons in hexagonal GaN microcavities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 85--88
\mathnet{http://mi.mathnet.ru/phts5312}
\crossref{https://doi.org/10.21883/FTP.2020.01.48780.9257}
\elib{https://elibrary.ru/item.asp?id=42571076}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 127--130
\crossref{https://doi.org/10.1134/S1063782620010042}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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