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Zegrya, Georgii Georgievich
Statistics Math-Net.Ru
Total publications: 30
Scientific articles: 28

Number of views:
This page:270
Abstract pages:1908
Full texts:563
References:158
Professor
Doctor of physico-mathematical sciences
E-mail:
Website: https://ioffe.ru/Dep_TM/ru/people/zegrya/;

https://www.mathnet.ru/eng/person56412
List of publications on Google Scholar
List of publications on ZentralBlatt
https://elibrary.ru/author_items.asp?authorid=23436
https://www.webofscience.com/wos/author/record/C-7339-2014

Publications in Math-Net.Ru Citations
2021
1. V. A. Morozov, A. G. Zegrya, G. G. Zegrya, G. G. Savenkov, “Piezoelectric properties of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:10 (2021),  680–684  mathnet; JETP Letters, 114:10 (2021), 625–629  isi  scopus 1
2. G. G. Zegrya, E. V. Shashkov, A. A. Karpova, N. S. Vorobiev, V. M. Freiman, A. G. Zegrya, Yu. S. Solomonov, “Laser effect in the explosion of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:4 (2021),  263–268  mathnet; JETP Letters, 114:4 (2021), 227–231  isi  scopus 1
3. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367  mathnet  scopus
2020
4. G. G. Zegrya, D. M. Samosvat, A. Ya. Vul', “Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  807–812  mathnet  elib; JETP Letters, 112:12 (2020), 769–773  isi  scopus 2
5. G. G. Zegrya, G. G. Savenkov, A. G. Zegrya, V. A. Bragin, I. A. Oskin, U. M. Poberezhnaya, “Laser initiation of energy-saturated composites based on nanoporous silicon”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1708–1714  mathnet  elib; Tech. Phys., 65:10 (2020), 1636–1642 4
6. M. V. Ageev, Yu. N. Vedernikov, G. G. Zegrya, U. M. Poberezhnaya, V. K. Popov, G. G. Savenkov, “Mechanosensitivity of nanoporous silicon-based binary mixtures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  48–51  mathnet  elib; Tech. Phys. Lett., 46:3 (2020), 249–252 2
2019
7. R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597  mathnet  elib; Tech. Phys., 64:10 (2019), 1509–1514
8. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1575–1584  mathnet  elib; Tech. Phys., 64:10 (2019), 1492–1500 6
9. G. G. Savenkov, A. G. Zegrya, G. G. Zegrya, B. V. Rumyantsev, A. B. Sinani, Yu. M. Mikhailov, “The possibilities of energy-saturated nanoporous silicon-based composites (review and new results)”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  397–403  mathnet  elib; Tech. Phys., 64:3 (2019), 361–367 9
10. D. M. Samosvat, O. P. Chikalova-Luzina, G. G. Zegrya, “The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1485–1496  mathnet  elib; Semiconductors, 53:11 (2019), 1445–1456 1
11. N. L. Bazhenov, K. J. Mynbaev, A. A. Semakova, G. G. Zegrya, “Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455  mathnet  elib; Semiconductors, 53:4 (2019), 428–433 2
12. R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276  mathnet  elib; Semiconductors, 53:2 (2019), 260–263 1
13. A. G. Zegrya, V. V. Sokolov, G. G. Zegrya, Yu. V. Ganin, Yu. M. Mikhailov, “The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  3–6  mathnet  elib; Tech. Phys. Lett., 45:11 (2019), 1067–1070 2
14. G. G. Savenkov, V. A. Morozov, T. V. Ukraintseva, V. M. Kats, G. G. Zegrya, M. A. Ilyushin, “The effect of shungite additives on electric discharge in ammonium perchlorate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  44–46  mathnet  elib; Tech. Phys. Lett., 45:10 (2019), 1001–1003
15. N. V. Pavlov, G. G. Zegrya, “Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:10 (2019),  9–12  mathnet  elib; Tech. Phys. Lett., 45:5 (2019), 481–484
2018
16. N. V. Pavlov, G. G. Zegrya, A. G. Zegrya, V. E. Bugrov, “Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  207–220  mathnet  elib; Semiconductors, 52:2 (2018), 195–208 2
17. D. M. Samosvat, O. P. Chikalova-Luzina, V. S. Khromov, A. G. Zegrya, G. G. Zegrya, “The mechanism of generation of singlet oxygen in the presence of excited nanoporous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  53–62  mathnet  elib; Tech. Phys. Lett., 44:6 (2018), 479–482 3
2017
18. A. N. Afanasiev, A. A. Greshnov, G. G. Zegrya, “Impact ionization rate in direct gap semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:9 (2017),  554–558  mathnet  elib; JETP Letters, 105:9 (2017), 586–590  isi  scopus
19. L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya, “Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201  mathnet  elib; Semiconductors, 51:9 (2017), 1148–1152 2
20. G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  501–506  mathnet  elib; Semiconductors, 51:4 (2017), 477–482 6
21. G. G. Savenkov, A. F. Kardo-Sisoev, A. G. Zegrya, I. A. Oskin, V. A. Bragin, G. G. Zegrya, “Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  57–63  mathnet  elib; Tech. Phys. Lett., 43:10 (2017), 896–898 2
2016
22. L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, È. V. Ivanov, Yu. P. Yakovlev, “Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800  mathnet  elib; Semiconductors, 50:6 (2016), 778–784 3
23. R. M. Peleshchak, Ī. Ī. Lazurchak, O. V. Kuzyk, O. O. Dan’kiv, G. G. Zegrya, “Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  318–323  mathnet  elib; Semiconductors, 50:3 (2016), 314–319 7
2010
24. O. I. Utesov, G. G. Zegrya, A. A. Greshnov, “Pure spin currents generation under quantum wells photoionization”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  40–42  mathnet; JETP Letters, 92:1 (2010), 33–35  isi  scopus 2
2002
25. A. A. Greshnov, G. G. Zegrya, Yu. B. Vasil'ev, S. D. Suchalkin, B. Ya. Mel'tser, S. V. Ivanov, P. S. Kop'ev, “Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262  mathnet; JETP Letters, 76:4 (2002), 222–226  scopus 2
2001
26. E. B. Dogonkin, G. G. Zegrya, “New mechanism of current-induced cooling of quantum systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:6 (2001),  346–351  mathnet; JETP Letters, 74:6 (2001), 312–317  scopus
1992
27. G. G. Zegrya, D. A. Parshin, A. R. Shabaev, “Long wavelength shift of the gain edge in semiconductor heterolasers”, Fizika Tverdogo Tela, 34:4 (1992),  1224–1230  mathnet
1984
28. L. É. Gurevich, G. G. Zegrya, “Thermomagnetic generation of alternative current at convective instability with feedback”, Fizika Tverdogo Tela, 26:10 (1984),  2980–2984  mathnet
2018
29. L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476  mathnet  elib; Semiconductors, 52:4 (2018), 493–496 1
1991
30. Zh. I. Alferov, Yu. N. Efremov, V. E. Golant, V. L. Gurevich, B. P. Zakharchenya, G. G. Zegrya, I. P. Ipatova, V. I. Perel', N. N. Pariiskii, A. D. Chernin, “Lev Emmanuilovich Gurevich (Obituary)”, UFN, 161:6 (1991),  207–209  mathnet; Phys. Usp., 34:6 (1991), 545–546

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