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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1485–1496
DOI: https://doi.org/10.21883/FTP.2019.11.48462.8991 (Mi phts5353) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Surface, interfaces, thin films

The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon

D. M. Samosvat, O. P. Chikalova-Luzina, G. G. Zegrya

Ioffe Institute, St. Petersburg
Full-text PDF (265 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2019.11.48462.8991
Abstract: The mechanism of singlet-oxygen generation on the surface of photoexcited nanoporous silicon has been theoretically analyzed. It is shown that the mechanism of singlet-oxygen generation is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule according to the Dexter exchange mechanism. An analytical expression is obtained, and the probability of energy transfer from nanoporous silicon to an oxygen molecule is numerically estimated. It is shown that its numerical value, on the order of $\sim$(10$^{3}$–10$^{4}$) s$^{-1}$, is in good agreement with the experimental data.
Keywords: nanoporous silicon, singlet oxygen, energy transfer.
Received: 03.10.2018
Revised: 18.02.2019
Accepted: 03.06.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1445–1456
DOI: https://doi.org/10.1134/S1063782619110162
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. M. Samosvat, O. P. Chikalova-Luzina, G. G. Zegrya, “The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1485–1496; Semiconductors, 53:11 (2019), 1445–1456
Citation in format AMSBIB
\Bibitem{SamChiZeg19}
\by D.~M.~Samosvat, O.~P.~Chikalova-Luzina, G.~G.~Zegrya
\paper The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1485--1496
\mathnet{http://mi.mathnet.ru/phts5353}
\crossref{https://doi.org/10.21883/FTP.2019.11.48462.8991}
\elib{https://elibrary.ru/item.asp?id=41300647}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1445--1456
\crossref{https://doi.org/10.1134/S1063782619110162}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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