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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors
G. G. Zegrya, D. M. Samosvat, A. Ya. Vul' Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
Abstract:
The energy spectrum of deep impurity centers in wide-bandgap semiconductors ($E_g > 2$ eV) of mesoscopic sizes $R \gg \lambda_{\mathrm{D}}$, where $\lambda_{\mathrm{D}}$ is the de Broglie wavelength, at which the spectrum of free (uncoupled) charge carriers is not quantized, but the surface significantly affects physical processes in the bulk, has been theoretically considered. It has been shown that the binding energy of an electron on an impurity center near the surface of the crystal tends to zero. In this case, the wavefunction of the electron of the impurity center located in the surface region is delocalized; i.e., the energy of the impurity electron lies in the conduction band. The possible effect of such an energy overlap on effects observed in wide-bandgap mesoscopic semiconductors is discussed.
Received: 02.11.2020 Revised: 05.11.2020 Accepted: 06.11.2020
Citation:
G. G. Zegrya, D. M. Samosvat, A. Ya. Vul', “Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 807–812; JETP Letters, 112:12 (2020), 769–773
Linking options:
https://www.mathnet.ru/eng/jetpl6324 https://www.mathnet.ru/eng/jetpl/v112/i12/p807
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Abstract page: | 121 | Full-text PDF : | 19 | References: | 18 | First page: | 6 |
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