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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 21, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2019.21.48463.17791 (Mi pjtf5271) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching

A. G. Zegryaa, V. V. Sokolova, G. G. Zegryaa, Yu. V. Ganinb, Yu. M. Mikhailovb

a Ioffe Institute, St. Petersburg
b Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Full-text PDF (102 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.21.48463.17791
Abstract: The effect of comparatively small changes in the free carrier concentration in a heavily doped $p$-type single-crystal silicon on the structural parameters of porous layers formed as a result of its anodic etching has been found. The pronounced influence exerted by the hole concentration on the structural porous silicon parameters being studied is explained on the basis of the concept of electrochemical pore-formation in silicon crystals as a self-organized cooperative process accompanied by the injection of electrons from the region of the chemical reaction at the propagation front of pores.
Keywords: porous silicon, electrochemical etching, doping level, porosity.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-0108 офи_м
The study was supported by the Russian Foundation for Basic Research, grant no. 16-29-0108 ofi_m.
Received: 18.03.2019
Revised: 02.07.2019
Accepted: 03.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 11, Pages 1067–1070
DOI: https://doi.org/10.1134/S1063785019110154
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Zegrya, V. V. Sokolov, G. G. Zegrya, Yu. V. Ganin, Yu. M. Mikhailov, “The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 3–6; Tech. Phys. Lett., 45:11 (2019), 1067–1070
Citation in format AMSBIB
\Bibitem{ZegSokZeg19}
\by A.~G.~Zegrya, V.~V.~Sokolov, G.~G.~Zegrya, Yu.~V.~Ganin, Yu.~M.~Mikhailov
\paper The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 21
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf5271}
\crossref{https://doi.org/10.21883/PJTF.2019.21.48463.17791}
\elib{https://elibrary.ru/item.asp?id=41848450}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 11
\pages 1067--1070
\crossref{https://doi.org/10.1134/S1063785019110154}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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