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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 318–323 (Mi phts6510)  

This article is cited in 7 scientific papers (total in 7 papers)

Surface, interfaces, thin films

Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms

R. M. Peleshchaka, Ī. Ī. Lazurchaka, O. V. Kuzyka, O. O. Dan’kiva, G. G. Zegryab

a Drohobych Ivan Franko State Pedagogical University
b Ioffe Institute, St. Petersburg
Full-text PDF (200 kB) Citations (7)
Abstract: The role of acoustoelectric effects in the formation of nanoscale structures of adatoms, resulting from the self-consistent interaction of adatoms with a surface acoustic wave and the electronic subsystem, is studied for the case of charged and uncharged adatoms. It is shown that an increase in the doping level of a semiconductor with donor impurities at a fixed average adatom concentration results in an increase in the critical temperature below which self-organization processes occur.
Keywords: Surface Acoustic Wave, Donor Concentration, Electronic Subsystem, Donor Impurity, Nonuniform Electric Field.
Received: 29.07.2015
Accepted: 07.08.2015
English version:
Semiconductors, 2016, Volume 50, Issue 3, Pages 314–319
DOI: https://doi.org/10.1134/S1063782616030180
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. M. Peleshchak, Ī. Ī. Lazurchak, O. V. Kuzyk, O. O. Dan’kiv, G. G. Zegrya, “Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 318–323; Semiconductors, 50:3 (2016), 314–319
Citation in format AMSBIB
\Bibitem{PelLazKuz16}
\by R.~M.~Peleshchak, {\= I}.~{\= I}.~Lazurchak, O.~V.~Kuzyk, O.~O.~Dan’kiv, G.~G.~Zegrya
\paper Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 3
\pages 318--323
\mathnet{http://mi.mathnet.ru/phts6510}
\elib{https://elibrary.ru/item.asp?id=25668163}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 3
\pages 314--319
\crossref{https://doi.org/10.1134/S1063782616030180}
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  • https://www.mathnet.ru/eng/phts/v50/i3/p318
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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