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Publications in Math-Net.Ru |
Citations |
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2024 |
1. |
V. V. Gudkov, N. S. Averkiev, I. V. Zhevstovskikh, Yu. V. Korostelin, M. N. Sarychev, “Влияние кристаллографической анизотропии на энергию стабилизации и вклад ян-теллеровской подсистемы в модули упругости легированных кристаллов”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:1 (2024), 54–58 |
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2023 |
2. |
S. N. Nikolaev, K. Yu. Chernoglazov, A. V. Emelyanov, A. V. Sitnikov, A. N. Taldenkov, T. D. Patsaev, A. L. Vasil'ev, E. A. Gan'shina, V. A. Demin, N. S. Averkiev, A. B. Granovskii, V. V. Ryl'kov, “Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54 ; JETP Letters, 118:1 (2023), 58–66 |
1
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2021 |
3. |
N. A. Bogoslovskiy, P. V. Petrov, N. S. Averkiev, “Spin-fluctuation transition in the disordered Ising model”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:6 (2021), 383–390 ; JETP Letters, 114:6 (2021), 347–353 |
6
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4. |
M. N. Sarychev, A. S. Bondarevskaya, I. V. Zhevstovskikh, V. A. Ulanov, G. S. Shakurov, A. V. Egranov, V. T. Surikov, N. S. Averkiev, V. V. Gudkov, “Tunneling relaxation mechanisms of the Jahn–Teller complexes in a CaF$_2$:Cr$^{2+}$ crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021), 52–57 ; JETP Letters, 113:1 (2021), 47–51 |
7
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2020 |
5. |
V. Yu. Mylnikov, N. S. Averkiev, G. S. Sokolovskii, “Cascaded second harmonic generation with a half-order periodic poling”, Optics and Spectroscopy, 128:11 (2020), 1717–1722 ; Optics and Spectroscopy, 128:11 (2020), 1851–1856 |
1
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2019 |
6. |
N. A. Bogoslovskii, P. V. Petrov, N. S. Averkiev, “Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model”, Fizika Tverdogo Tela, 61:11 (2019), 2036–2039 ; Phys. Solid State, 61:11 (2019), 2005–2009 |
5
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7. |
M. N. Sarychev, I. V. Zhevstovskikh, N. S. Averkiev, I. B. Bersuker, V. V. Gudkov, V. T. Surikov, “Determining the parameters of the Jahn–Teller effect in impurity centers from ultrasonic experiments: application to the ZnSe : Ni$^{2+}$ crystal”, Fizika Tverdogo Tela, 61:2 (2019), 319–324 ; Phys. Solid State, 61:2 (2019), 180–186 |
2
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8. |
N. S. Averkiev, A. V. Korotchenkov, V. A. Kosobukin, “On the theory of plasmon–excitons: an estimate of the coupling constant and the optical spectrum”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1063–1067 ; Semiconductors, 53:8 (2019), 1042–1047 |
4
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2018 |
9. |
N. S. Averkiev, A. A. Gutkin, “Mn$_{\operatorname{Ga}}$ acceptor center in GaAs (review)”, Fizika Tverdogo Tela, 60:12 (2018), 2275–2305 ; Phys. Solid State, 60:12 (2018), 2311–2343 |
3
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10. |
G. S. Dimitriev, I. V. Krainov, V. F. Sapega, N. S. Averkiev, J. Debus, E. Lähderanta, “Energy structure of an individual Mn acceptor in GaAs : Mn”, Fizika Tverdogo Tela, 60:8 (2018), 1556–1565 ; Phys. Solid State, 60:8 (2018), 1568–1577 |
11. |
P. V. Petrov, I. A. Kokurin, Yu. L. Ivanov, G. E. Cirlin, V. E. Sedov, N. S. Averkiev, “Fine structure of levels and piezospectroscopy of A$^{+}$ centers in GaAs/AlGaAs quantum wells”, Fizika Tverdogo Tela, 60:2 (2018), 333–340 ; Phys. Solid State, 30:2 (2018), 339–346 |
1
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12. |
G. M. Savchenko, V. V. Dyudelev, E. A. Kognovitskaya, S. N. Losev, A. G. Deryagin, V. I. Kuchinskii, N. S. Averkiev, G. S. Sokolovskii, “A material for difference-frequency generation of terahertz radiation”, Optics and Spectroscopy, 125:4 (2018), 560–563 ; Optics and Spectroscopy, 125:4 (2018), 582–585 |
4
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2017 |
13. |
G. S. Dimitriev, V. F. Sapega, N. S. Averkiev, I. E. Panaiotti, K. H. Ploog, “Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells”, Fizika Tverdogo Tela, 59:11 (2017), 2240–2245 ; Phys. Solid State, 59:11 (2017), 2262–2267 |
1
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14. |
G. M. Savchenko, V. V. Dyudelev, V. V. Lundin, A. V. Sakharov, A. F. Tsatsul'nikov, E. A. Kognovitskaya, S. N. Losev, A. G. Deryagin, V. I. Kuchinskii, N. S. Averkiev, G. S. Sokolovskii, “Photonic-crystal waveguide for the second-harmonic generation”, Fizika Tverdogo Tela, 59:9 (2017), 1680–1683 ; Phys. Solid State, 59:9 (2017), 1702–1705 |
5
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15. |
A. A. Gutkin, N. S. Averkiev, “Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled $d$ shell”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1299–1324 ; Semiconductors, 51:10 (2017), 1247–1273 |
1
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16. |
K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta, “Spin-dependent tunneling recombination in heterostructures with a magnetic layer”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 45–50 ; Semiconductors, 51:1 (2017), 43–48 |
4
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2016 |
17. |
K. Yu. Golenitskii, A. M. Monakhov, N. I. Sablina, N. S. Averkiev, “Longitudinal whispering-gallery modes in metal microcavities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:9 (2016), 637–639 ; JETP Letters, 104:9 (2016), 615–617 |
18. |
K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta, “Spin-dependent tunneling recombination in heterostructures with a magnetic layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1725 ; Semiconductors, 51:1 (2017), 43–48 |
3
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19. |
N. A. Bogoslovskii, P. V. Petrov, Yu. L. Ivanov, N. S. Averkiev, K. D. Tsendin, “Effect of Coulomb correlations on luminescence and absorption in compensated semiconductors”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 905–910 ; Semiconductors, 50:7 (2016), 888–893 |
2
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20. |
G. M. Savchenko, V. V. Dyudelev, K. K. Soboleva, V. V. Lundin, A. V. Sakharov, E. A. Kognovitskaya, S. N. Losev, A. G. Deryagin, V. I. Kuchinskii, N. S. Averkiev, G. S. Sokolovskii, “Metamaterial for efficient second harmonic generation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 40–48 ; Tech. Phys. Lett., 42:10 (2016), 1041–1044 |
7
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2015 |
21. |
I. A. Kokurin, N. S. Averkiev, “Orientation of electron spins by the current in a quasi-one-dimensional system”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:8 (2015), 627–630 ; JETP Letters, 101:8 (2015), 568–571 |
4
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2014 |
22. |
K. S. Denisov, N. S. Averkiev, “Singularities of the magnetization of a two-dimensional diluted magnetic semiconductor with strong spin-orbit interaction”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:7 (2014), 467–471 ; JETP Letters, 99:7 (2014), 400–404 |
5
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2013 |
23. |
A. A. Dontsov, A. M. Monakhov, N. S. Averkiev, “Calculation of the spectrum of whispering gallery modes in cylindrical resonators with perturbed boundary conditions”, Kvantovaya Elektronika, 43:5 (2013), 414–417 [Quantum Electron., 43:5 (2013), 414–417 ] |
2
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24. |
L. A. Kulakova, N. S. Averkiev, A. N. Darinskii, È. Z. Yakhkind, “Diagnostics of the fine spectrum of a quantum well in laser heterostructures using ultrasonic deformation”, Kvantovaya Elektronika, 43:5 (2013), 410–413 [Quantum Electron., 43:5 (2013), 410–413 ] |
4
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2012 |
25. |
N. S. Averkiev, K. A. Baryshnikov, I. B. Bersuker, V. V. Gudkov, I. V. Zhevstovskikh, V. Yu. Mayakin, A. M. Monakhov, M. N. Sarychev, V. E. Sedov, “Relaxation and resonance ultrasound attenuation by Jahn–Teller centers in a GaAs:Cu crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012), 252–256 ; JETP Letters, 96:4 (2012), 236–239 |
3
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2010 |
26. |
N. S. Averkiev, “Spin relaxation anisotropy in two-dimensional semiconductors”, UFN, 180:7 (2010), 777–780 ; Phys. Usp., 53:7 (2010), 742–745 |
4
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2002 |
27. |
S. A. Tarasenko, N. S. Averkiev, “Interference of spin splittings in magneto-oscillation phenomena in two-dimensional systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:11 (2002), 669–672 ; JETP Letters, 75:11 (2002), 552–555 |
46
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1992 |
28. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, M. A. Reshchikov, V. R. Sosnovskii, “Симметрия комплекса $V_{\text{Ga}}\text{Te}_{\text{As}}$ в GaAs и его
переориентация при низких температурах”, Fizika i Tekhnika Poluprovodnikov, 26:7 (1992), 1269–1281 |
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1991 |
29. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, V. E. Sedov, N. A. Smirnov, A. F. Tsatsulnikov, “Влияние смешивания электронных состояний электронно-колебательным
взаимодействием на строение и пьезоспектроскопические свойства
ян-теллеровских акцепторов в GaAs”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1976–1985 |
30. |
N. S. Averkiev, T. K. Ashirov, V. B. Shikin, E. B. Osipov, V. E. Sedov, A. F. Tsatsulnikov, “Стабилизация ориентации ян-теллеровских искажений
акцептора Au$^{0}_{\text{Ga}}$ в GaAs при низких температурах
и переориентация центра в процессе рекомбинации”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1967–1975 |
31. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, M. A. Reshchikov, V. E. Sedov, V. R. Sosnovskii, “Оптическая анизотропия центра, вызывающего полосу фотолюминесценции
с максимумом вблизи 1.18 эВ в GaAs : Te. II. Влияние одноосного давления
на фотолюминесценцию центра”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 58–66 |
32. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, M. A. Reshchikov, V. E. Sedov, V. R. Sosnovskii, “Оптическая анизотропия центра, вызывающего полосу фотолюминесценции
с максимумом вблизи 1.18 эВ в GaAs : Te. I. Поляризованная фотолюминесценция”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 50–57 |
33. |
N. S. Averkiev, R. N. Kyutt, B. A. Matveev, N. M. Stus, G. N. Talalakin, E. I. Chaikina, “Поляризация фотолюминесценции с поверхности гетероструктуры
A$^{\text{III}}$B$^{\text{V}}$ с профилированной подложкой”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 12–16 |
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1990 |
34. |
N. S. Averkiev, V. S. Vikhnin, “Mechanism of spin polarization of charged paramagnetic centers in the interaction with current carriers”, Fizika Tverdogo Tela, 32:12 (1990), 3480–3489 |
35. |
N. S. Averkiev, A. A. Gutkin, E. B. Osipov, V. E. Sedov, A. F. Tsatsul'nikov, “An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 32:9 (1990), 2667–2676 |
1
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36. |
N. S. Averkiev, V. B. Shikin, O. G. Maksimova, E. B. Osipov, “Влияние центров Mn$_{\text{Ga}}$ в GaAs на эффект Фарадея вблизи края основной
полосы поглощения”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1632–1637 |
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1989 |
37. |
N. S. Averkiev, Yu. V. Ilisavskii, E. B. Osipov, V. M. Sternin, “Acoustoelectronic interaction in semiconductors with complex band structure”, Fizika Tverdogo Tela, 31:3 (1989), 241–251 |
38. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, V. E. Sedov, A. F. Tsatsulnikov, “Ag$_{\text{Ga}}$ — новый ян-теллеровский акцептор в GaAs”, Fizika i Tekhnika Poluprovodnikov, 23:11 (1989), 2072–2074 |
39. |
N. S. Averkiev, E. D. Belorusets, E. Z. Imamov, Yu. T. Rebane, “Энергетический спектр многозарядных примесных центров в кубических
полупроводниках”, Fizika i Tekhnika Poluprovodnikov, 23:7 (1989), 1193–1198 |
40. |
N. S. Averkiev, V. B. Shikin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov, “Влияние случайных полей на спектр ЭПР акцепторов
Mn$_{\text{Ga}}$ в $p$-GaAs”, Fizika i Tekhnika Poluprovodnikov, 23:1 (1989), 73–78 |
41. |
N. S. Averkiev, A. N. Imenkov, A. M. Litvak, Yu. P. Yakovlev, “RELAXATION OF EMISSION AND NON-EQUILIBRIUM POPULATION IN
QUANTUM-DIMENSIONAL SEMICONDUCTING LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989), 79–83 |
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1988 |
42. |
N. S. Averkiev, G. E. Pikus, M. L. Shmatov, “Surface excitons and acceptors in a MIS structure”, Fizika Tverdogo Tela, 30:11 (1988), 3276–3285 |
43. |
N. S. Averkiev, A. A. Gutkin, E. B. Osipov, V. E. Sedov, A. F. Tsatsul'nikov, “Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression”, Fizika Tverdogo Tela, 30:5 (1988), 1459–1465 |
44. |
N. S. Averkiev, A. A. Gutkin, E. B. Osipov, M. A. Reshchikov, “Effect of the hole - $3d$-electron exchange interaction on the properties of the $\mathrm{Mn}$ deep acceptor in gaas”, Fizika Tverdogo Tela, 30:3 (1988), 765–774 |
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1987 |
45. |
N. S. Averkiev, Yu. V. Ilisavskii, V. M. Sternin, “Electron anharmonism in complex valence band semiconductors”, Fizika Tverdogo Tela, 29:5 (1987), 1450–1455 |
46. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, M. A. Reshchikov, “Role of Exchange Interaction in Piezospectroscopic Effects Related with the Mn Center in GaAs”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1847–1853 |
47. |
N. S. Averkiev, G. E. Pikus, “Surface Exciton in MDS Structures”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1493–1495 |
48. |
O. A. Mezrin, O. V. Konstantinov, N. S. Averkiev, “Fluctuation Levels for Minority Carriers in Degenerate Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 504–513 |
49. |
N. S. Averkiev, Z. A. Adamiya, D. I. Aladashvili, T. K. Ashirov, V. B. Shikin, E. B. Osipov, V. E. Sedov, “Deformation-Potential Constants and Charge State of Cu$_{\text{Ga}}$ Jahn–Teller Center in GaAs”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 421–426 |
50. |
N. S. Averkiev, V. B. Shikin, E. B. Osipov, V. E. Sedov, “Adiabatic Potentials and Impurity Photoluminescence of Deep Jahn–Teller Center Coupling Two Holes at Uniaxial Pressure”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 415–420 |
51. |
N. S. Averkiev, A. N. Baranov, A. N. Imenkov, A. A. Rogachev, Yu. P. Yakovlev, “Polarization of emission in quantum dimensional on one heterotransition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 332–337 |
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1986 |
52. |
N. S. Averkiev, T. K. Ashirov, A. A. Gutkin, E. B. Osipov, V. E. Sedov, “Softening of $p$-$\mathrm{GaAs}$ crystals due to deep Jahn–Teller $\mathrm{Cu}$-centers”, Fizika Tverdogo Tela, 28:10 (1986), 2959–2963 |
1
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53. |
N. S. Averkiev, V. A. Vetrov, V. B. Shikin, I. A. Merkulov, L. P. Nikitin, I. I. Reshina, L. G. Romanov, “Neutral State of a Cu$_{\text{Ga}}$ Deep Acceptor in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1617–1622 |
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1985 |
54. |
N. S. Averkiev, V. B. Shikin, A. A. Isakov, E. M. Magerramov, V. E. Sedov, “Piezospectroscopic Study of Photoluminescence Band in GaAs : Те : Сu with the Maximum near 1.3 eV”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 893–898 |
55. |
N. S. Averkiev, Yu. T. Rebane, I. N. Yassievich, “Ionization Potentials of Multicharge Deep Impurities in Cubic Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 96–100 |
56. |
N. S. Averkiev, S. Sh. Egemberdieva, И. N. Kalinin, O. V. Konstantinov, A. A. Rogachev, A. S. Filipchenko, “Photoluminescence of highly alloyed crystals of $n$-type indium-antimonide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985), 1326–1330 |
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1984 |
57. |
N. S. Averkiev, Yu. V. Ilisavskii, V. M. Sternin, “Sound interaction with holes in $p$-$Si$”, Fizika Tverdogo Tela, 26:7 (1984), 2005–2012 |
58. |
N. S. Averkiev, N. V. Zotova, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Поляризация люминесценции эпитаксиальных слоев твердых растворов
InAs$_{1-x-y}$Sb$_{x}$P$_{y}$”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1795–1798 |
59. |
N. S. Averkiev, V. B. Shikin, N. M. Kolchanova, M. A. Reshchikov, “Влияние одноосной деформации на связанную с Mn полосу примесной
фотолюминесценции в GaAs”, Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1629–1633 |
60. |
N. S. Averkiev, “To the Problem of Temperature Dependence of Optical Activity Induced by Current in Tellurium”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 724–727 |
61. |
N. S. Averkiev, V. M. Asnin, A. A. Bakun, A. M. Danishevskii, E. L. Ivchenko, G. E. Pikus, A. A. Rogachev, “Circular Photogalvanic Effect in Tellurium. II. Experiment”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 648–654 |
62. |
N. S. Averkiev, V. M. Asnin, A. A. Bakun, A. M. Danishevskii, E. L. Ivchenko, G. E. Pikus, A. A. Rogachev, “Circular Photogalvanic Effect in Tellurium. I. Theory”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 639–647 |
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1983 |
63. |
N. S. Averkiev, S. A. Obukhov, A. A. Rogachev, N. A. Rud', “On radiative line origin in heavily doped $p$-$\mathrm{GaAs}$ in the presence of uniaxial deformation”, Fizika Tverdogo Tela, 25:2 (1983), 343–345 |
64. |
N. S. Averkiev, A. T. Gorelenok, I. S. Tarasov, “Особенности поляризации люминесценции и константы деформационного
потенциала в InP $n$- и $p$-типа проводимости”, Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 997–1002 |
65. |
N. S. Averkiev, M. I. Dyakonov, “Ток, обусловленный неоднородностью спиновой ориентации электронов
в полупроводнике”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 629–632 |
66. |
N. S. Averkiev, N. I. Shikina, V. B. Shikin, “Примесная фотолюминесценция GaAs$\langle$Cu$\rangle$ около 1.36 эВ
в условиях одноосного сжатия по направлению [111]”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 97–102 |
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