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Fizika Tverdogo Tela, 2019, Volume 61, Issue 11, Pages 2036–2039
DOI: https://doi.org/10.21883/FTT.2019.11.48404.538 (Mi ftt8612) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductors

Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model

N. A. Bogoslovskii, P. V. Petrov, N. S. Averkiev

Ioffe Institute, St. Petersburg
Full-text PDF (233 kB) Citations (5)
DOI: https://doi.org/10.21883/FTT.2019.11.48404.538
Abstract: The numerical simulation was applied to study the temperature dependence of the impurity magnetic susceptibility. The direct exchange interaction of the impurity magnetic moments randomly distributed in space was considered within the Ising model. When the temperature in a system decreases, the magnetic susceptibility behavior in this system ceases to comply with the Curie law, which is associated with the formation of a spin glass phase. It is shown that the expression of the preexponential factor in the formula for the direct exchange interaction considerably influences the temperature dependence of the magnetic susceptibility only in the case of ferromagnetic exchange.
Keywords: doped semiconductors, spin glass.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00283
The paper was supported by the Russian Foundation for Basic Research, project no. 19-02-00283.
Received: 25.06.2019
Revised: 25.06.2019
Accepted: 02.07.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 11, Pages 2005–2009
DOI: https://doi.org/10.1134/S1063783419110088
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Bogoslovskii, P. V. Petrov, N. S. Averkiev, “Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model”, Fizika Tverdogo Tela, 61:11 (2019), 2036–2039; Phys. Solid State, 61:11 (2019), 2005–2009
Citation in format AMSBIB
\Bibitem{BogPetAve19}
\by N.~A.~Bogoslovskii, P.~V.~Petrov, N.~S.~Averkiev
\paper Impurity magnetic susceptibility of semiconductors for the direct exchange interaction in the Ising model
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 11
\pages 2036--2039
\mathnet{http://mi.mathnet.ru/ftt8612}
\crossref{https://doi.org/10.21883/FTT.2019.11.48404.538}
\elib{https://elibrary.ru/item.asp?id=41300768}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 11
\pages 2005--2009
\crossref{https://doi.org/10.1134/S1063783419110088}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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