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Uspekhi Fizicheskikh Nauk, 2010, Volume 180, Number 7, Pages 777–780
DOI: https://doi.org/10.3367/UFNr.0180.201007j.0777 (Mi ufn2250) 		 
This article is cited in 4 scientific papers (total in 4 papers)

CONFERENCES AND SYMPOSIA

Spin relaxation anisotropy in two-dimensional semiconductors

N. S. Averkiev

Ioffe Physico-Technical Institute, Russian Academy of Sciences
Full-text PDF (681 kB) Citations (4)
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DOI: https://doi.org/10.3367/UFNr.0180.201007j.0777
English version:
Physics–Uspekhi, 2010, Volume 53, Issue 7, Pages 742–745
DOI: https://doi.org/10.3367/UFNe.0180.201007j.0777
Bibliographic databases:
Document Type: Article
PACS: 01.10.Fv, 75.76.+j, 76.30.-v, 85.75.-d
Language: Russian
Citation: N. S. Averkiev, “Spin relaxation anisotropy in two-dimensional semiconductors”, UFN, 180:7 (2010), 777–780; Phys. Usp., 53:7 (2010), 742–745
Citation in format AMSBIB
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  • https://www.mathnet.ru/eng/ufn/v180/i7/p777
    CONFERENCES AND SYMPOSIA
    This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Успехи физических наук Physics-Uspekhi
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    Full-text PDF :70
    References:40
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