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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 45–50
DOI: https://doi.org/10.21883/FTP.2017.01.43994.8291
(Mi phts6256)
 

This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

K. S. Denisovab, I. V. Rozhanskyab, N. S. Averkieva, E. Lähderantab

a Ioffe Institute, St. Petersburg
b Lappeenranta University of Technology, Lappeenranta, Finland
Full-text PDF (315 kB) Citations (4)
Abstract: We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.
Received: 25.04.2016
Accepted: 25.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 43–48
DOI: https://doi.org/10.1134/S1063782617010067
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta, “Spin-dependent tunneling recombination in heterostructures with a magnetic layer”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 45–50; Semiconductors, 51:1 (2017), 43–48
Citation in format AMSBIB
\Bibitem{DenRozAve17}
\by K.~S.~Denisov, I.~V.~Rozhansky, N.~S.~Averkiev, E.~L\"ahderanta
\paper Spin-dependent tunneling recombination in heterostructures with a magnetic layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 45--50
\mathnet{http://mi.mathnet.ru/phts6256}
\crossref{https://doi.org/10.21883/FTP.2017.01.43994.8291}
\elib{https://elibrary.ru/item.asp?id=28969404}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 43--48
\crossref{https://doi.org/10.1134/S1063782617010067}
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  • https://www.mathnet.ru/eng/phts/v51/i1/p45
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    This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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