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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 4, Pages 252–256
(Mi jetpl3207)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Relaxation and resonance ultrasound attenuation by Jahn–Teller centers in a GaAs:Cu crystal
N. S. Averkieva, K. A. Baryshnikova, I. B. Bersukerb, V. V. Gudkovcd, I. V. Zhevstovskikhec, V. Yu. Mayakinc, A. M. Monakhova, M. N. Sarychevc, V. E. Sedova a Ioffe Physico-Technical Institute, Russian Academy of Sciences
b University of Texas in Austin
c Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
d Russian State Professional Pedagogical University, Ekaterinburg
e Institute of Metal Physics, Ural Division of the Russian Academy of Sciences
Abstract:
The interaction of ultrasound with Cu$_{\rm Ga}$4As in a GaAs:Cu crystal has been experimentally studied. The temperature dependences of the attenuation of all normal ultrasonic modes propagating in the ${<}110{>}$ direction both in doped copper and in nominally pure gallium arsenide crystals have been measured. In the GaAs:Cu crystal, the attenuation peak has been revealed for a transverse wave polarized along the ${<}110{>}$ axis whose elastic shifts correspond to the symmetry of the tetragonal mode of the Jahn–Teller effect. The temperature dependence of the attenuation of this wave indicates that two types of attenuation—relaxation and resonance—occur. The constructed temperature dependence of the relaxation time indicates that tunneling through the potential barrier between the minima of the adiabatic potential energy is the main relaxation mechanism at temperatures below $10$ K. Tunneling splitting estimated from experimental data is in good agreement with the theoretical estimate.
Received: 04.06.2012
Citation:
N. S. Averkiev, K. A. Baryshnikov, I. B. Bersuker, V. V. Gudkov, I. V. Zhevstovskikh, V. Yu. Mayakin, A. M. Monakhov, M. N. Sarychev, V. E. Sedov, “Relaxation and resonance ultrasound attenuation by Jahn–Teller centers in a GaAs:Cu crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012), 252–256; JETP Letters, 96:4 (2012), 236–239
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https://www.mathnet.ru/eng/jetpl3207 https://www.mathnet.ru/eng/jetpl/v96/i4/p252
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