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This article is cited in 3 scientific papers (total in 3 papers)
Reviews
Mn$_{\operatorname{Ga}}$ acceptor center in GaAs (review)
N. S. Averkiev, A. A. Gutkin Ioffe Institute, St. Petersburg
Abstract:
The model of the Mn$_{\operatorname{Ga}}$ acceptor in GaAs in which initial ground state of a coupled hole $\Gamma_8$ is changed due to the antiferromagnetic exchange interaction with five 3$d$ electrons of the Mn core is described. The acceptor energy spectrum and the wave functions of its states and also their changes under action of deformations, electric and magnetic fields are considered. Expressions are presented for the description of various properties of isolated Mn$_{\operatorname{Ga}}$ acceptors in GaAs, and the data of some experiments (changes in the Mn$_{\operatorname{Ga}}^0$ luminescence and absorption spectra and polarization under uniaxial pressures and in magnetic field, EPR spectra, temperature dependence of the magnetic susceptibility, circular polarization of photoluminescence during excitation by polarized light in magnetic field, etc.) are analyzed. It is demonstrated that, in some cases, it is necessary to take into account the existence of random electric and strain fields splitting the acceptor states in the crystal. The analysis results show that this model agrees well with most of the experimental results. The exchange interaction constant is in the range of 3–5 meV.
Received: 16.04.2018 Revised: 21.05.2018
Citation:
N. S. Averkiev, A. A. Gutkin, “Mn$_{\operatorname{Ga}}$ acceptor center in GaAs (review)”, Fizika Tverdogo Tela, 60:12 (2018), 2275–2305; Phys. Solid State, 60:12 (2018), 2311–2343
Linking options:
https://www.mathnet.ru/eng/ftt8964 https://www.mathnet.ru/eng/ftt/v60/i12/p2275
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