Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika Tverdogo Tela, 2017, Volume 59, Issue 11, Pages 2240–2245
DOI: https://doi.org/10.21883/FTT.2017.11.45068.109 (Mi ftt9408) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductors

Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

G. S. Dimitrieva, V. F. Sapegaa, N. S. Averkieva, I. E. Panaiottia, K. H. Ploogb

a Ioffe Institute, St. Petersburg
b Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
Full-text PDF (284 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2017.11.45068.109
Abstract: The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.
Received: 03.04.2017
English version:
Physics of the Solid State, 2017, Volume 59, Issue 11, Pages 2262–2267
DOI: https://doi.org/10.1134/S1063783417110063
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Dimitriev, V. F. Sapega, N. S. Averkiev, I. E. Panaiotti, K. H. Ploog, “Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells”, Fizika Tverdogo Tela, 59:11 (2017), 2240–2245; Phys. Solid State, 59:11 (2017), 2262–2267
Citation in format AMSBIB
\Bibitem{DimSapAve17}
\by G.~S.~Dimitriev, V.~F.~Sapega, N.~S.~Averkiev, I.~E.~Panaiotti, K.~H.~Ploog
\paper Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 11
\pages 2240--2245
\mathnet{http://mi.mathnet.ru/ftt9408}
\crossref{https://doi.org/10.21883/FTT.2017.11.45068.109}
\elib{https://elibrary.ru/item.asp?id=30554694}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 11
\pages 2262--2267
\crossref{https://doi.org/10.1134/S1063783417110063}
Linking options:
  • https://www.mathnet.ru/eng/ftt9408
  • https://www.mathnet.ru/eng/ftt/v59/i11/p2240
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:46
    Full-text PDF :7
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024