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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. V. Dorokhin, M. S. Boldin, E. A. Uskova, A. V. Boryakov, P. B. Demina, I. V. Erofeeva, A. V. Zdoroveyshchev, V. E. Kotomina, Yu. M. Kuznetsov, E. A. Lantsev, A. A. Popov, V. N. Trushin, “Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1975–1983   |
| 2. |
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin, “Methods for switching radiation polarization in GaAs laser diodes”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1409–1414 ; Tech. Phys., 66:11 (2021), 1194–1199  |
| 3. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 38–41 |
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2020 |
| 4. |
M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta, “Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144 ; Semiconductors, 54:10 (2020), 1341–1346 |
| 5. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806 ; Semiconductors, 54:8 (2020), 956–960 |
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| 6. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, D. A. Pavlov, Yu. V. Usov, V. E. Milin, Yu. A. Danilov, “Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 17–20 ; Tech. Phys. Lett., 46:7 (2020), 691–694 |
| 7. |
M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev, “Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 40–43 ; Tech. Phys. Lett., 46:1 (2020), 87–90 |
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2019 |
| 8. |
M. V. Dorokhin, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Zdoroveyshchev, P. B. Demina, I. V. Erofeeva, “Studies of thermoelectric properties of superlattices based on manganese silicide and germanium”, Fizika Tverdogo Tela, 61:12 (2019), 2344–2348 ; Phys. Solid State, 61:12 (2019), 2348–2352 |
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| 9. |
A. V. Zdoroveyshchev, O. V. Vikhrova, P. B. Demina, M. V. Dorokhin, A. V. Kudrin, A. G. Temiryazev, M. P. Temiryazeva, “Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures”, Fizika Tverdogo Tela, 61:9 (2019), 1628–1633 ; Phys. Solid State, 61:9 (2019), 1577–1582 |
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| 10. |
M. V. Dorokhin, P. B. Demina, I. V. Erofeeva, A. V. Zdoroveyshchev, Yu. M. Kuznetsov, M. S. Boldin, A. A. Popov, E. A. Lantsev, A. V. Boryakov, “In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1182–1188 ; Semiconductors, 53:9 (2019), 1158–1163 |
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| 11. |
A. A. Svincov, E. B. Yakimov, M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, “Simulation of the parameters of a titanium-tritide-based beta-voltaic cell”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 101–103 ; Semiconductors, 53:1 (2019), 96–98 |
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| 12. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 33–36 ; Tech. Phys. Lett., 45:7 (2019), 668–671 |
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| 13. |
M. V. Dorokhin, P. B. Demina, A. V. Budanov, Yu. N. Vlasov, G. I. Kotov, A. V. Zdoroveyshchev, V. N. Trushin, B. N. Zvonkov, “Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 52–55 ; Tech. Phys. Lett., 45:3 (2019), 235–238 |
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2018 |
| 14. |
A. V. Kudrin, A. V. Zdoroveyshchev, O. V. Vikhrova, M. V. Dorokhin, I. L. Kalentyeva, P. B. Demina, “Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier”, Fizika Tverdogo Tela, 60:11 (2018), 2236–2239 ; Phys. Solid State, 60:11 (2018), 2276–2279 |
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| 15. |
A. G. Temiryazev, M. P. Temiryazeva, A. V. Zdoroveyshchev, O. V. Vikhrova, M. V. Dorokhin, P. B. Demina, A. V. Kudrin, “Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope”, Fizika Tverdogo Tela, 60:11 (2018), 2158–2165 ; Phys. Solid State, 60:11 (2018), 2200–2206 |
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2017 |
| 16. |
A. V. Kudrin, M. V. Dorokhin, A. V. Zdoroveyshchev, P. B. Demina, O. V. Vikhrova, I. L. Kalentyeva, M. V. Ved, “Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer”, Fizika Tverdogo Tela, 59:11 (2017), 2203–2205 ; Phys. Solid State, 59:11 (2017), 2223–2225 |
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| 17. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199 ; Phys. Solid State, 59:11 (2017), 2216–2219 |
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| 18. |
E. I. Malysheva, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, A. V. Rykov, M. V. Ved, Yu. A. Danilov, “Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures”, Fizika Tverdogo Tela, 59:11 (2017), 2142–2147 ; Phys. Solid State, 59:11 (2017), 2162–2167 |
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| 19. |
M. V. Dorokhin, M. V. Ved, P. B. Demina, A. V. Zdoroveyshchev, A. V. Kudrin, A. V. Rykov, Yu. M. Kuznetsov, “Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes”, Fizika Tverdogo Tela, 59:11 (2017), 2135–2141 ; Phys. Solid State, 59:11 (2017), 2155–2161 |
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2016 |
| 20. |
A. V. Zdoroveyshchev, M. V. Dorokhin, O. V. Vikhrova, P. B. Demina, A. V. Kudrin, A. G. Temiryazev, M. P. Temiryazeva, “Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes”, Fizika Tverdogo Tela, 58:11 (2016), 2186–2189 ; Phys. Solid State, 58:11 (2016), 2267–2270 |
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| 21. |
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kriukov, S. Yu. Zubkov, “Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468 ; Semiconductors, 50:11 (2016), 1443–1448 |
| 22. |
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev, “Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 3–8 ; Semiconductors, 50:1 (2016), 1–7 |
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