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This article is cited in 1 scientific paper (total in 1 paper)
Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures
M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The low-temperature circularly polarized electroluminescence in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures was investigated. It was found that the degree of circular polarization weakly depends on the spatial separation of the active region and the magnetic layer and is retained even at a spacer layer thickness of 12 nm. The revealed effect is associated with the long-range interaction of carriers with Mn ions.
Keywords:
diluted magnetic semiconductors, circular polarization, heterostructures, exchange interaction.
Received: 10.10.2019 Revised: 24.10.2019 Accepted: 24.10.2019
Citation:
M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev, “Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 40–43; Tech. Phys. Lett., 46:1 (2020), 87–90
Linking options:
https://www.mathnet.ru/eng/pjtf5214 https://www.mathnet.ru/eng/pjtf/v46/i2/p40
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