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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Sushkov, D. A. Pavlov, A. I. Andrianov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, N. V. Baidus, D. V. Yurasov, A. V. Rykov, “Comparison of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 978–988   |
| 2. |
A. V. Rykov, R. N. Kriukov, I. V. Samartsev, P. A. Yunin, V. G. Shengurov, A. V. Zaitsev, N. V. Baidus, “Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40 ; Tech. Phys. Lett., 47:5 (2021), 413–416 |
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2019 |
| 3. |
A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov, “Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1271–1274 ; Semiconductors, 53:9 (2019), 1242–1245 |
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2018 |
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N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
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| 5. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
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2017 |
| 6. |
E. I. Malysheva, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, A. V. Rykov, M. V. Ved, Yu. A. Danilov, “Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures”, Fizika Tverdogo Tela, 59:11 (2017), 2142–2147 ; Phys. Solid State, 59:11 (2017), 2162–2167 |
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| 7. |
M. V. Dorokhin, M. V. Ved, P. B. Demina, A. V. Zdoroveyshchev, A. V. Kudrin, A. V. Rykov, Yu. M. Kuznetsov, “Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes”, Fizika Tverdogo Tela, 59:11 (2017), 2135–2141 ; Phys. Solid State, 59:11 (2017), 2155–2161 |
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| 8. |
M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544 ; Tech. Phys., 62:10 (2017), 1545–1550 |
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| 9. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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| 10. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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| 11. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 695–698 ; Semiconductors, 51:5 (2017), 663–666 |
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2016 |
| 12. |
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev, “Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 3–8 ; Semiconductors, 50:1 (2016), 1–7 |
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