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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 8, Pages 37–40
DOI: https://doi.org/10.21883/PJTF.2021.08.50852.18670 (Mi pjtf6565) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates

A. V. Rykova, R. N. Kriukova, I. V. Samartseva, P. A. Yuninb, V. G. Shengurova, A. V. Zaitseva, N. V. Baidusa

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (803 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2021.08.50852.18670
Abstract: GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using Al$_x$Ga$_{1-x}$As seed layers with different aluminum contents $x$ in solid solution have been investigated. The influence of the $x$ value on the density and sizes of antiphase domains, outcropping onto the sample surface, and optical properties of the GaAs layer is demonstrated. The heterostructures have been grown on (100) substrates with small random off-cut from the nominal crystallographic orientation (0.7$^\circ$ towards [110]).
Keywords: heteroepitaxy, III–V on silicon, antiphase defects, photoluminescence.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-03-2020-191/5
Russian Foundation for Basic Research 19-32-90184
18-29-20016
This study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-03-2020-191/5) and the Russian Foundation for Basic Research in the part concerning the formation of Ge/Si substrates by the hot-wire method (project no. 19-32-90184) and in the part concerning the optimization of the MOVPE growth modes (project no. 18-29-20016).
Received: 23.12.2020
Revised: 13.01.2021
Accepted: 17.01.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 5, Pages 413–416
DOI: https://doi.org/10.1134/S1063785021040283
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Rykov, R. N. Kriukov, I. V. Samartsev, P. A. Yunin, V. G. Shengurov, A. V. Zaitsev, N. V. Baidus, “Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40; Tech. Phys. Lett., 47:5 (2021), 413–416
Citation in format AMSBIB
\Bibitem{RykKriSam21}
\by A.~V.~Rykov, R.~N.~Kriukov, I.~V.~Samartsev, P.~A.~Yunin, V.~G.~Shengurov, A.~V.~Zaitsev, N.~V.~Baidus
\paper Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 8
\pages 37--40
\mathnet{http://mi.mathnet.ru/pjtf6565}
\crossref{https://doi.org/10.21883/PJTF.2021.08.50852.18670}
\elib{https://elibrary.ru/item.asp?id=46333411}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 5
\pages 413--416
\crossref{https://doi.org/10.1134/S1063785021040283}
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