Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 8, Pages 37–40
DOI: https://doi.org/10.21883/PJTF.2021.08.50852.18670 (Mi pjtf6565) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates

A. V. Rykova, R. N. Kriukova, I. V. Samartseva, P. A. Yuninb, V. G. Shengurova, A. V. Zaitseva, N. V. Baidusa

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (803 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2021.08.50852.18670
Abstract: GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using Al$_x$Ga$_{1-x}$As seed layers with different aluminum contents $x$ in solid solution have been investigated. The influence of the $x$ value on the density and sizes of antiphase domains, outcropping onto the sample surface, and optical properties of the GaAs layer is demonstrated. The heterostructures have been grown on (100) substrates with small random off-cut from the nominal crystallographic orientation (0.7$^\circ$ towards [110]).
Keywords: heteroepitaxy, III–V on silicon, antiphase defects, photoluminescence.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-03-2020-191/5
Russian Foundation for Basic Research 19-32-90184
18-29-20016
This study was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. 075-03-2020-191/5) and the Russian Foundation for Basic Research in the part concerning the formation of Ge/Si substrates by the hot-wire method (project no. 19-32-90184) and in the part concerning the optimization of the MOVPE growth modes (project no. 18-29-20016).
Received: 23.12.2020
Revised: 13.01.2021
Accepted: 17.01.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 5, Pages 413–416
DOI: https://doi.org/10.1134/S1063785021040283
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Rykov, R. N. Kriukov, I. V. Samartsev, P. A. Yunin, V. G. Shengurov, A. V. Zaitsev, N. V. Baidus, “Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40; Tech. Phys. Lett., 47:5 (2021), 413–416
Citation in format AMSBIB
\Bibitem{RykKriSam21}
\by A.~V.~Rykov, R.~N.~Kriukov, I.~V.~Samartsev, P.~A.~Yunin, V.~G.~Shengurov, A.~V.~Zaitsev, N.~V.~Baidus
\paper Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 8
\pages 37--40
\mathnet{http://mi.mathnet.ru/pjtf6565}
\crossref{https://doi.org/10.21883/PJTF.2021.08.50852.18670}
\elib{https://elibrary.ru/item.asp?id=46333411}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 5
\pages 413--416
\crossref{https://doi.org/10.1134/S1063785021040283}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6565
  • https://www.mathnet.ru/eng/pjtf/v47/i8/p37
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:61
    Full-text PDF :32
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024