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This article is cited in 1 scientific paper (total in 1 paper)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al$_{2}$O$_{3}$(1$\bar {1}$02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al$_2$O$_3$ substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown.
Keywords:
heteroepitaxy, transmission electron microscopy, sapphire substrate, GaAs layer, photoluminescence spectra.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov, “Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1271–1274; Semiconductors, 53:9 (2019), 1242–1245
Linking options:
https://www.mathnet.ru/eng/phts5415 https://www.mathnet.ru/eng/phts/v53/i9/p1271
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