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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev, “Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010   |
| 2. |
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il'inskaya, Yu. P. Yakovlev, “Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613 ; Semiconductors, 55:7 (2021), 601–607 |
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2020 |
| 3. |
V. V. Romanov, E. V. Ivanov, K. D. Moiseev, “Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure”, Fizika Tverdogo Tela, 62:11 (2020), 1822–1827 ; Phys. Solid State, 62:11 (2020), 2039–2044 |
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| 4. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, Yu. P. Yakovlev, P. S. Kop'ev, “Radiative recombination and impact ionization in semiconductor nanostructures (review)”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1267–1288 ; Semiconductors, 54:12 (2020), 1527–1547 |
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| 5. |
V. V. Romanov, E. V. Ivanov, A. A. Pivovarova, K. D. Moiseev, Yu. P. Yakovlev, “Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 202–206 ; Semiconductors, 54:2 (2020), 253–257 |
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2019 |
| 6. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m”, Fizika Tverdogo Tela, 61:10 (2019), 1746–1753 ; Phys. Solid State, 61:10 (2019), 1699–1706 |
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| 7. |
V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il'inskaya, Yu. P. Yakovlev, “Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 832–838 ; Semiconductors, 53:6 (2019), 822–827 |
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| 8. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna, Yu. P. Yakovlev, “Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54 ; Semiconductors, 53:1 (2019), 46–50 |
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2018 |
| 9. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures”, Fizika Tverdogo Tela, 60:3 (2018), 585–590 ; Phys. Solid State, 60:3 (2018), 592–597 |
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| 10. |
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il'inskaya, Yu. P. Yakovlev, “GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099 ; Semiconductors, 52:9 (2018), 1215–1220 |
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| 11. |
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911 ; Semiconductors, 52:8 (2018), 1037–1042 |
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2017 |
| 12. |
M. V. Bogdanovich, D. M. Kabanov, E. V. Lebiadok, P. V. Shpak, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, I. A. Andreev, E. V. Kunitsyna, È. V. Ivanov, Yu. P. Yakovlev, “Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons”, Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017), 315–318 ; Tech. Phys., 62:2 (2017), 344–346 |
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2016 |
| 13. |
L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, È. V. Ivanov, Yu. P. Yakovlev, “Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 794–800 ; Semiconductors, 50:6 (2016), 778–784 |
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2018 |
| 14. |
L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476 ; Semiconductors, 52:4 (2018), 493–496 |
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