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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Pages 1267–1288
DOI: https://doi.org/10.21883/FTP.2020.12.50226.9509 (Mi phts5101) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Reviews

Radiative recombination and impact ionization in semiconductor nanostructures (review)

M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, Yu. P. Yakovlev, P. S. Kop'ev

Ioffe Institute, St. Petersburg
Full-text PDF (1589 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.12.50226.9509
Abstract: The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantum efficiency and luminescence optical power in all the investigated structures is caused by a common physical mechanism, specifically, the creation of additional electron–hole pairs during impact ionization by hot carriers heated at the high band offset at the heterointerface under current pumping or by the multiplication of carriers in nanocrystals upon multiexciton generation under illumination by high-energy photons.
Keywords: radiative recombination, impact ionization, heterostructures, quantum wells, quantum dots.
Received: 24.08.2020
Revised: 26.08.2020
Accepted: 26.08.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1527–1547
DOI: https://doi.org/10.1134/S1063782620120210
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, Yu. P. Yakovlev, P. S. Kop'ev, “Radiative recombination and impact ionization in semiconductor nanostructures (review)”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1267–1288; Semiconductors, 54:12 (2020), 1527–1547
Citation in format AMSBIB
\Bibitem{MikIvaDan20}
\by M.~P.~Mikhailova, E.~V.~Ivanov, L.~V.~Danilov, K.~V.~Kalinina, Yu.~P.~Yakovlev, P.~S.~Kop'ev
\paper Radiative recombination and impact ionization in semiconductor nanostructures (review)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1267--1288
\mathnet{http://mi.mathnet.ru/phts5101}
\crossref{https://doi.org/10.21883/FTP.2020.12.50226.9509}
\elib{https://elibrary.ru/item.asp?id=44368061}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1527--1547
\crossref{https://doi.org/10.1134/S1063782620120210}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v54/i12/p1267
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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