Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure

The results of studying the electroluminescent and current-voltage characteristics of the $n$-InAs/$n$-InAsSb/$p$-InAsSbP heterostructure grown by gas-phase epitaxy from organometallic compounds are presented. Intense electroluminescence was detected in the spectral range 0.23–0.29 eV at the temperature $T$ = 77 K. The position of the maximum of the main emission band ($h\nu\sim$ 0.24 eV) showed a noticeable “blue” shift with increasing applied forward bias. Based on the performed studies, it was concluded that there is a staggered type II heterojunction at the InAs$_{0.84}$Sb$_{0.16}$/InAs$_{0.32}$Sb$_{0.28}$P$_{0.40}$ heterointerface, which is confirmed by the results of the calculation of the energy band diagram.