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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, “Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022), 611–612  ; JETP Letters, 115:10 (2022), 574–580  |
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2021 |
| 2. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, “Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 908–911  ; Semiconductors, 55:10 (2021), 812–815 |
| 3. |
V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov, V. K. Smirnov, “Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 356–359 ; Semiconductors, 55:4 (2021), 395–398 |
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2020 |
| 4. |
M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1390 ; Semiconductors, 54:12 (2020), 1682–1684 |
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| 5. |
A. V. Belonovski, G. R. Pozina, Ya. V. Levitskii, K. M. Morozov, M. I. Mitrofanov, E. I. Girshova, K. A. Ivanov, S. N. Rodin, V. P. Evtikhiev, M. A. Kaliteevskii, “Strong coupling of excitons in hexagonal GaN microcavities”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 85–88 ; Semiconductors, 54:1 (2020), 127–130 |
| 6. |
V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31 ; Tech. Phys. Lett., 46:4 (2020), 382–384 |
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2019 |
| 7. |
S. N. Rodin, V. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev, M. A. Kaliteevski, “GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography”, Fizika Tverdogo Tela, 61:12 (2019), 2333 ; Phys. Solid State, 61:12 (2019), 2335–2337 |
| 8. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009 ; Semiconductors, 53:7 (2019), 989–992 |
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| 9. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 3–5 |
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2018 |
| 10. |
V. V. Lundin, A. F. Tsatsul'nikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, Ya. V. Levitskii, V. P. Evtikhiev, “Selective epitaxial growth of III–N structures using ion-beam nanolithography”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1237–1243 ; Semiconductors, 52:10 (2018), 1357–1362 |
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| 11. |
M. I. Mitrofanov, Ya. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevskii, V. P. Evtikhiev, “Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 816–818 ; Semiconductors, 52:7 (2018), 954–956 |
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| 12. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51 ; Tech. Phys. Lett., 44:6 (2018), 525–527 |
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2017 |
| 13. |
V. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul'nikov, “InGaN/GaN light-emitting diode microwires of submillimeter length”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 101–104 ; Semiconductors, 51:1 (2017), 100–103 |
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