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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, “Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 908–911   ; Semiconductors, 55:10 (2021), 812–815 |
| 2. |
V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov, V. K. Smirnov, “Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 356–359 ; Semiconductors, 55:4 (2021), 395–398 |
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2020 |
| 3. |
V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2123–2126 ; Tech. Phys., 65:12 (2020), 2031–2034 |
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| 4. |
V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31 ; Tech. Phys. Lett., 46:4 (2020), 382–384 |
| 5. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, “Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 12–14 ; Tech. Phys. Lett., 46:1 (2020), 59–61 |
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2019 |
| 6. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Synthesis of hexagonal AlN è GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 574–577 ; Tech. Phys., 64:4 (2019), 531–534 |
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| 7. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009 ; Semiconductors, 53:7 (2019), 989–992 |
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| 8. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 3–5 |
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2018 |
| 9. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51 ; Tech. Phys. Lett., 44:6 (2018), 525–527 |
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| 10. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103 ; Tech. Phys. Lett., 44:1 (2018), 81–83 |
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2017 |
| 11. |
S. A. Kukushkin, A. V. Osipov, V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates”, Fizika Tverdogo Tela, 59:4 (2017), 660–667 ; Phys. Solid State, 59:4 (2017), 674–681 |
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