Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate

We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a $V$-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47$^\circ$. It is established that metalorganic hydride vapor-phase epitaxy (HVPE) on this substrate leads to the formation of semipolar AlN(10$\bar{1}$2) layers having an X-ray rocking curve with a minimum FWHM value of $\omega_\theta\sim$ 60 arcmin. Raman spectra of this epilayer display additional peaks related to $A_1$(TO) and $E_1$(TO) phonons in contrast to the spectrum of a polar AlN(0001) layer containing an additional $A_1$(LO) peak.