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This article is cited in 2 scientific papers (total in 2 papers)
Physical science of materials
Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate
V. N. Bessolov, E. V. Konenkova, V. N. Panteleev Ioffe Institute, St. Petersburg
Abstract:
Plastic relaxation of a stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate has been investigated using scanning electron microscopy. It is shown that the application of a nanorelief consisting of triangular nanogrooves with inclined faces close to the Si(111) plane in a semipolar AlN layer can lead to the formation of cracks only in the direction perpendicular to a groove. Model concepts of plastic relaxation of the stressed semipolar layer are based on comparison of the threshold stress, above which cracks appear, with the thermomechanical stresses emerging because of the difference between the thermal expansion coefficients of the AlN/Si structure.
Received: 25.03.2020 Revised: 15.06.2020 Accepted: 30.06.2020
Citation:
V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2123–2126; Tech. Phys., 65:12 (2020), 2031–2034
Linking options:
https://www.mathnet.ru/eng/jtf5134 https://www.mathnet.ru/eng/jtf/v90/i12/p2123
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