|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146   ; Semiconductors, 55:2 (2021), 194–201 |
3
|
|
2020 |
| 2. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
3
|
| 3. |
E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
1
|
|
2019 |
| 4. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
4
|
| 5. |
E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov, V. V. Preobrazhenskii, “The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 512–519 ; Semiconductors, 53:4 (2019), 503–510 |
2
|
|
2018 |
| 6. |
A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov, “Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 525 ; Semiconductors, 52:5 (2018), 664–666 |
2
|
| 7. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
2
|
|
| Organisations |
|
| |
|
|
Contact us: