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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, “Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 908–911   ; Semiconductors, 55:10 (2021), 812–815 |
| 2. |
V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov, V. K. Smirnov, “Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 356–359 ; Semiconductors, 55:4 (2021), 395–398 |
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2020 |
| 3. |
V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2123–2126 ; Tech. Phys., 65:12 (2020), 2031–2034 |
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| 4. |
V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31 ; Tech. Phys. Lett., 46:4 (2020), 382–384 |
| 5. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, “Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 12–14 ; Tech. Phys. Lett., 46:1 (2020), 59–61 |
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2019 |
| 6. |
L. M. Sorokin, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov, V. N. Bessolov, S. A. Kukushkin, “Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers”, Fizika Tverdogo Tela, 61:12 (2019), 2317–2321 ; Phys. Solid State, 61:12 (2019), 2316–2320 |
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| 7. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 574–577 ; Tech. Phys., 64:4 (2019), 531–534 |
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| 8. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009 ; Semiconductors, 53:7 (2019), 989–992 |
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| 9. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 3–5 |
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2018 |
| 10. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51 ; Tech. Phys. Lett., 44:6 (2018), 525–527 |
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| 11. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103 ; Tech. Phys. Lett., 44:1 (2018), 81–83 |
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2017 |
| 12. |
S. A. Kukushkin, A. V. Osipov, V. N. Bessolov, E. V. Konenkova, V. N. Panteleev, “Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates”, Fizika Tverdogo Tela, 59:4 (2017), 660–667 ; Phys. Solid State, 59:4 (2017), 674–681 |
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1992 |
| 13. |
V. N. Bessolov, M. V. Lebedev, T. V. L'vova, E. B. Novikov, “Sulfide passivation of $\mathrm{A}^{3}\mathrm{B}^{5}$ semiconductors: model description and experiment”, Fizika Tverdogo Tela, 34:6 (1992), 1713–1718 |
| 14. |
T. V. Sakalo, V. N. Bessolov, S. A. Kukushkin, M. V. Lebedev, B. V. Tsarenkov, “RELAXATION LIQUID EPITAXY WITH MASS-TRANSFER INVERSION - SIMULATION AND
EXPERIMENT”, Zhurnal Tekhnicheskoi Fiziki, 62:3 (1992), 100–105 |
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1991 |
| 15. |
V. L. Berkovits, V. N. Bessolov, T. V. Lvova, E. B. Novikov, V. I. Safarov, R. V. Khasieva, B. V. Tsarenkov, “Потенциальные барьеры на поверхности $n$- и $p$-GaAs (100): кинетика
движения поверхностного уровня Ферми при химической обработке”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1406–1413 |
| 16. |
V. N. Bessolov, M. V. Lebedev, “DIFFUSION RELAXATION EFFECT UNDER GAALAS LIQUID EPITAXY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 17–20 |
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1990 |
| 17. |
V. N. Bessolov, S. G. Konnikov, M. V. Lebedev, K. Yu. Pogrebickii, B. V. Tsarenkov, “EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH
MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5
LAYERS”, Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990), 165–169 |
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1988 |
| 18. |
V. N. Bessolov, S. A. Kukushkin, M. V. Lebedev, B. V. Tsarenkov, “RELAXATION LIQUID EPITAXY BASED ON THE MASS-TRANSFER INVERSION - ITS
POTENTIALITIES FOR THE FORMATION OF HYPERFINE A3B5 LAYERS”, Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988), 1507–1512 |
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1986 |
| 19. |
G. T. Aitieva, V. N. Bessolov, A. T. Denisova, S. E. Klimenko, S. A. Kukushkin, M. V. Lebedev, B. V. Tsarenkov, “SUPERTHIN GAAS LAYER GROWTH ON THE GAALAS SUBSTRATE BY LIQUID EPITAXY”, Zhurnal Tekhnicheskoi Fiziki, 56:5 (1986), 910–913 |
| 20. |
G. T. Aitieva, V. N. Bessolov, A. S. Volkov, V. V. Evstropov, K. V. Kiselev, G. G. Kochiev, A. L. Lipko, B. V. Tsarenkov, “Interface Luminescence of $n$-GaAs/$n$-GaAlAs Heterostructure Produced by Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1313–1317 |
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1985 |
| 21. |
V. N. Bessolov, E. S. Dobrynina, M. V. Lebedev, V. I. Petrov, B. V. Tsarenkov, Yu. P. Yakovlev, “Luminescence of (GaAl)P Layers Elastically
and Plastically Deformed in Heteroepitaxy”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1078–1080 |
| 22. |
G. T. Aitieva, V. N. Bessolov, S. E. Klimenko, V. E. Korsukov, B. V. Tsarenkov, Yu. P. Yakovlev, “Development of $(Ga\,Al)As$ superfine layers by liquid epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:8 (1985), 465–469 |
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1984 |
| 23. |
V. N. Bessolov, S. G. Konnikov, M. V. Lebedev, V. E. Umanskii, Yu. P. Yakovlev, “Нарушение псевдоморфного состояния в Ga$_{1-x}$Al$_{x}$P/GaP
структурах”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:3 (1984), 149–153 |
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1983 |
| 24. |
V. N. Bessolov, S. G. Konnikov, V. E. Umanskii, Yu. P. Yakovlev, “DISTINCTION OF THERMAL-EXPANSION COEFFICIENTS IN GA1-XALXP-GAP
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983), 411–412 |
| 25. |
V. N. Bessolov, A. N. Imenkov, S. G. Konnikov, E. A. Posse, V. E. Umanskii, B. V. Tsarenkov, Yu. P. Yakovlev, “Квантовая эффективность пластически и упруго деформированных
варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2173–2176 |
| 26. |
Y. Y. Abdurakhmanov, V. N. Bessolov, A. N. Imenkov, E. A. Posse, B. V. Tsarenkov, Yu. P. Yakovlev, “Спектры фоточувствительности варизонных Ga$_{1-x}$Al$_{x}$P
$p{-}n$-структур”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 125–128 |
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