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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. A. Karandashov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, “On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance”, Optics and Spectroscopy, 129:9 (2021), 1193–1197   ; Optics and Spectroscopy, 129:11 (2021), 1231–1235 |
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2020 |
| 2. |
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 835–840 ; Tech. Phys., 65:5 (2020), 799–804 |
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2019 |
| 3. |
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides”, Zhurnal Tekhnicheskoi Fiziki, 89:8 (2019), 1233–1237 ; Tech. Phys., 64:8 (2019), 1164–1167 |
3
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| 4. |
B. A. Matveev, G. Yu. Sotnikova, “Mid-IR leds based on A$^{3}$B$^{5}$ heterostructures for gas analyzers. Capabilities and applications 2014–2018”, Optics and Spectroscopy, 127:2 (2019), 300–305 ; Optics and Spectroscopy, 127:2 (2019), 322–327 |
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| 5. |
S. A. Karandashov, B. A. Matveev, M. A. Remennyi, “Indium arsenide-based spontaneous emission sources (review: a decade later)”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 147–157 ; Semiconductors, 53:2 (2019), 139–149 |
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2018 |
| 6. |
S. E. Alexandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, M. A. Remennyi, G. Yu. Sotnikova, “InAsSb diode optical pairs for real-time carbon dioxide sensors”, Zhurnal Tekhnicheskoi Fiziki, 88:9 (2018), 1433–1438 ; Tech. Phys., 63:9 (2018), 1390–1395 |
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| 7. |
N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 234–237 ; Tech. Phys., 63:2 (2018), 226–229 |
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2017 |
| 8. |
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275 ; Semiconductors, 51:2 (2017), 260–266 |
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2016 |
| 9. |
N. D. Il'inskaya, S. A. Karandashov, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 657–662 ; Semiconductors, 50:5 (2016), 646–651 |
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1992 |
| 10. |
M. S. Aidaraliev, G. G. Zegrya, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Природа температурной зависимости пороговой плотности тока
длинноволновых лазеров на основе ДГС InAsSbP/InAs и InAsSbP/InAsSb”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 246–256 |
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1991 |
| 11. |
N. S. Averkiev, R. N. Kyutt, B. A. Matveev, N. M. Stus, G. N. Talalakin, E. I. Chaikina, “Поляризация фотолюминесценции с поверхности гетероструктуры
A$^{\text{III}}$B$^{\text{V}}$ с профилированной подложкой”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 12–16 |
| 12. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991), 75–79 |
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1990 |
| 13. |
T. S. Argunova, R. N. Kyutt, B. A. Matveev, S. S. Ruvimov, N. M. Stus, G. N. Talalakin, “Structural perfection of $\mathrm{InAs}_{1-x-y}\mathrm{Sb}_{x}\mathrm{P}_{y}$–$\mathrm{InAs}$ double heterostructures”, Fizika Tverdogo Tela, 32:11 (1990), 3355–3361 |
| 14. |
N. V. Zotova, A. V. Losev, B. A. Matveev, N. M. Stus, G. N. Talalakin, A. S. Filipchenko, “ABSORPTION-EDGE OF VARISON EPITAXIAL LAYERS OF INAS1-XSBX WHERE
(X-LESS-THAN-0,54)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 76–80 |
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1989 |
| 15. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 49–52 |
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1988 |
| 16. |
B. A. Matveev, V. I. Petrov, N. M. Stus, G. N. Talalakin, A. V. Shabalin, “Катодолюминесценция градиентных эпитаксиальных структур
InAsSbP/InAs”, Fizika i Tekhnika Poluprovodnikov, 22:7 (1988), 1244–1247 |
| 17. |
B. Z. Kushkimbaeva, B. A. Matveev, N. M. Stus, G. N. Talalakin, E. I. Chaikina, “A PROFILE OF THE DEFORMATION IN GRADIENT STRUCTURES OF
INAS1-X-YSBXY/INAS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988), 2044–2048 |
| 18. |
M. S. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN
PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988), 1617–1621 |
| 19. |
B. Z. Kushkimbaeva, B. A. Matveev, G. N. Talalakin, A. S. Filipchenko, E. I. Chaikina, “REDISTRIBUTION OF AFTER-PRESSURE DURING SUBLAYER PROFILING IN
INGASBAS/GASB STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 247–250 |
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1987 |
| 20. |
B. A. Matveev, L. G. Novikova, N. M. Stus, G. N. Talalakin, M. A. Chernov, “MANIFESTATION OF BOUNDARY DISTORTIONS ON X-RAY TOPOGRAMS OF GAASSBP-GAAS
CURVED STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987), 2000–2004 |
| 21. |
B. Z. Kushkimbaeva, B. A. Matveev, N. M. Stus, G. N. Talalakin, A. S. Filipchenko, E. I. Chaikina, “Photoluminescence of Plastically Deformed $p$-Type GaSb”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1914–1915 |
| 22. |
N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, Yu. Yu. Bilinets, “Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As
(${0 < x < 0.23}$)”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1079–1084 |
| 23. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 563–565 |
| 24. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 329–331 |
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1986 |
| 25. |
S. G. Konnikov, B. A. Matveev, T. B. Popova, N. M. Stus, G. N. Talalakin, V. E. Umanskii, “Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures”, Fizika Tverdogo Tela, 28:3 (1986), 789–792 |
| 26. |
N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986), 1444–1447 |
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1985 |
| 27. |
N. P. Esina, N. V. Zotova, B. A. Matveev, L. D. Neuimina, N. M. Stus, G. N. Talalakin, “Peculiarities
of Luminescence of Plastically Deformed
InAsSbP/InAs Heterostructures”, Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 2031–2035 |
| 28. |
A. A. Bakun, B. A. Matveev, V. B. Smirnitskiĭ, N. M. Stus, G. N. Talalakin, “Concave diffraction lattices on the monocrystal surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1172–1175 |
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1984 |
| 29. |
N. S. Averkiev, N. V. Zotova, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Поляризация люминесценции эпитаксиальных слоев твердых растворов
InAs$_{1-x-y}$Sb$_{x}$P$_{y}$”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1795–1798 |
| 30. |
A. A. Bakun, B. A. Matveev, I. N. Popov, A. A. Rogachev, N. M. Stus, G. N. Talalakin, “X-RAY-DIFFRACTION ON THE PLASTIC DEFORMED EPITAXIAL HETEROSTRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1297–1301 |
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1983 |
| 31. |
N. P. Esina, N. V. Zotova, B. A. Matveev, N. V. Stus, G. N. Talalakin, T. D. Abishev, “Длинноволновые неохлаждаемые светодиоды на основе твердых растворов
InAs$_{1-x-y}$Sb$_{x}$P$_{y}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983), 391–395 |
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