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This article is cited in 1 scientific paper (total in 1 paper)
Solid-State Electronics
Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures
B. A. Matveevab, V. I. Ratushnyic, A. Yu. Rybalchenkoc a Ioffe Institute, St. Petersburg
b IoffeLED Ltd., St. Petersburg
c Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute
Abstract:
The electrical performance of thermophotovoltaic converters with a flip-chip design based on $p$-InAsSbP/$n$-InAs/$n$-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different parts of the structure on the spatial distribution of current density in the active region is revealed, and the conditions for maximizing the efficiency of photocurrent collection and minimizing confluence are determined.
Keywords:
thermophotovoltaic converter, InAsSbP/InAs heterostructures, current-voltage characteristics, current density distribution.
Received: 17.01.2019 Revised: 07.05.2019 Accepted: 13.11.2019
Citation:
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 835–840; Tech. Phys., 65:5 (2020), 799–804
Linking options:
https://www.mathnet.ru/eng/jtf5318 https://www.mathnet.ru/eng/jtf/v90/i5/p835
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