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This article is cited in 15 scientific papers (total in 15 papers)
Reviews
Indium arsenide-based spontaneous emission sources (review: a decade later)
S. A. Karandashova, B. A. Matveeva, M. A. Remennyiab a Ioffe Institute, St. Petersburg
b IoffeLED Ltd., St. Petersburg
Abstract:
The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L – I and I – V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.
Received: 12.12.2017 Revised: 16.04.2018
Citation:
S. A. Karandashov, B. A. Matveev, M. A. Remennyi, “Indium arsenide-based spontaneous emission sources (review: a decade later)”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 147–157; Semiconductors, 53:2 (2019), 139–149
Linking options:
https://www.mathnet.ru/eng/phts5578 https://www.mathnet.ru/eng/phts/v53/i2/p147
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Abstract page: | 57 | Full-text PDF : | 12 |
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