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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
A. I. Galimov, M. V. Rakhlin, G. V. Klimko, Yu. M. Zadiranov, Yu. A. Guseva, S. I. Troshkov, T. V. Shubina, A. A. Toropov, “Source of indistinguishable single photons based on epitaxial InAs/GaAs quantum dots for integration in quantum computing schemes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:4 (2021), 248–255 ; JETP Letters, 113:4 (2021), 252–258 |
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2. |
A. V. Malevskaya, N. D. Il'inskaya, N. A. Kalyuzhnyy, D. A. Malevskii, Yu. M. Zadiranov, P. V. Pokrovskii, A. A. Blokhin, A. V. Andreeva, “Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1086–1090 |
3. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon'kov, Yu. M. Zadiranov, “High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194 ; Semiconductors, 55:2 (2021), 243–249 |
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4. |
V. Yu. Mylnikov, D. V. Chistyakov, S. H. Abdulrazak, N. G. Deryagin, Yu. M. Zadiranov, S. N. Losev, V. V. Dyudelev, G. S. Sokolovskii, “Period of “droplet” quasi-Bessel beam generated with the round-tip axicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 48–51 |
5. |
A. V. Malevskaya, Yu. M. Zadiranov, D. A. Malevskii, P. V. Pokrovskii, N. D. Il'inskaya, V. M. Andreev, “Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 14–17 ; Tech. Phys. Lett., 47:2 (2021), 114–117 |
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2020 |
6. |
A. V. Belashov, P. S. Butorin, Yu. M. Zadiranov, S. G. Kalmykov, V. A. Maximov, M. È. Sasin, P. Yu. Serdobintsev, “Measuring geometric parameters of a high-power infrared laser beam near the focus for applications in a laser-plasma short-wave radiation source”, Optics and Spectroscopy, 128:8 (2020), 1224–1228 ; Optics and Spectroscopy, 128:8 (2020), 1338–1341 |
1
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7. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
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2019 |
8. |
M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. V. Sedova, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, Yu. A. Guseva, Ya. V. Terent'ev, S. V. Ivanov, A. A. Toropov, “Highly efficient semiconductor emitter of single photons in the red spectral range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019), 147–151 ; JETP Letters, 109:3 (2019), 145–149 |
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9. |
D. V. Chistyakov, S. N. Losev, S. H. Abdulrazak, V. Yu. Mylnikov, E. A. Kognovitskaya, Yu. M. Zadiranov, N. G. Deryagin, V. V. Dyudelev, V. I. Kuchinskii, G. S. Sokolovskii, “Generation of droplet quasi-Bessel beams using a semiconductor laser”, Optics and Spectroscopy, 127:5 (2019), 781–786 ; Optics and Spectroscopy, 127:5 (2019), 848–853 |
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10. |
N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maksimov, “Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 211–215 ; Semiconductors, 53 (2019), 200–204 |
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11. |
A. V. Malevskaya, Yu. M. Zadiranov, A. A. Blokhin, V. M. Andreev, “Studying the formation of antireflection coatings on multijunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 15–17 ; Tech. Phys. Lett., 45:10 (2019), 1024–1026 |
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12. |
S. A. Blokhin, N. A. Maleev, M. A. Bobrov, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, M. M. Kulagina, A. A. Blokhin, Yu. A. Guseva, A. M. Ospennikov, M. V. Petrenko, A. G. Gladyshev, A. Yu. Egorov, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, V. M. Ustinov, “Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks”, Kvantovaya Elektronika, 49:2 (2019), 187–190 [Quantum Electron., 49:2 (2019), 187–190 ] |
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2018 |
13. |
M. V. Rakhlin, K. G. Belyaev, S. V. Sorokin, I. V. Sedova, D. A. Kirilenko, A. M. Mozharov, I. S. Mukhin, M. M. Kulagina, Yu. M. Zadiranov, S. V. Ivanov, A. A. Toropov, “Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018), 201–205 ; JETP Letters, 108:3 (2018), 201–204 |
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14. |
A. V. Babichev, G. A. Gusev, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, A. A. Usikova, Yu. M. Zadiranov, N. D. Il'inskaya, V. N. Nevedomskiy, V. V. Dyudelev, G. S. Sokolovskii, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, “Lasing in 9.6-$\mu$m quantum cascade lasers”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1559–1563 ; Tech. Phys., 63:10 (2018), 1511–1515 |
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15. |
P. S. Butorin, Yu. M. Zadiranov, S. Yu. Zuev, S. G. Kalmykov, V. N. Polkovnikov, M. È. Sasin, N. I. Chkhalo, “Absolutely calibrated spectrally resolved measurements of Xe laser plasma radiation intensity in the EUV range”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1554–1558 ; Tech. Phys., 63:10 (2018), 1507–1510 |
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16. |
V. V. Mamutin, A. P. Vasil'ev, A. V. Lyutetskiy, N. D. Il'inskaya, Yu. M. Zadiranov, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, N. A. Maleev, V. M. Ustinov, “On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 812–815 ; Semiconductors, 52:7 (2018), 950–953 |
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17. |
V. V. Mamutin, N. A. Maleev, A. P. Vasil'ev, N. D. Il'inskaya, Yu. M. Zadiranov, A. A. Usikova, M. A. Yagovkina, Yu. M. Shernyakov, V. M. Ustinov, “Investigation of the modified structure of a quantum cascade laser”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 133–137 ; Semiconductors, 52:1 (2018), 126–130 |
1
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18. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 98–104 ; Semiconductors, 52:1 (2018), 93–99 |
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19. |
S. N. Losev, S. H. Abdulrazak, D. V. Chistyakov, V. Yu. Mylnikov, E. A. Kognovitskaya, I. V. Berkutov, Yu. M. Zadiranov, N. G. Deryagin, V. V. Dyudelev, V. I. Kuchinskii, G. S. Sokolovskii, “Generation of droplet bessel beams using a semiconductor laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 72–78 ; Tech. Phys. Lett., 44:10 (2018), 887–889 |
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20. |
V. V. Mamutin, A. P. Vasil'ev, A. V. Lyutetskiy, N. D. Il'inskaya, A. A. Usikova, Yu. M. Zadiranov, N. A. Maleev, A. N. Sofronov, D. A. Firsov, L. E. Vorob'ev, V. M. Ustinov, “Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 17–23 ; Tech. Phys. Lett., 44:9 (2018), 814–816 |
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21. |
N. N. Ledentsov, V. A. Shchukin, V. P. Kalosha, N. N. Ledentsov, Jr., J. R. Kropp, M. Agustín, S. A. Blokhin, A. A. Blokhin, M. A. Bobrov, M. M. Kulagina, Yu. M. Zadiranov, N. A. Maleev, “A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018), 85–94 ; Tech. Phys. Lett., 44:1 (2018), 36–39 |
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22. |
S. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, N. A. Maleev, I. I. Novikov, L. Ya. Karachinsky, N. N. Ledentsov, V. M. Ustinov, “The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018), 67–75 ; Tech. Phys. Lett., 44:1 (2018), 28–31 |
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2017 |
23. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, Yu. M. Zadiranov, E. A. Evropeitsev, A. V. Sakharov, N. N. Ledentsov, L. Ya. Karachinsky, A. M. Ospennikov, N. A. Maleev, V. M. Ustinov, “Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1697 ; Semiconductors, 52:1 (2018), 93–99 |
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24. |
A. V. Babichev, N. V. Kryzhanovskaya, È. I. Moiseev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, S. A. Blokhin, M. A. Bobrov, Yu. M. Zadiranov, S. I. Troshkov, A. Yu. Egorov, “Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1176–1181 ; Semiconductors, 51:9 (2017), 1127–1132 |
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25. |
V. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul'nikov, “InGaN/GaN light-emitting diode microwires of submillimeter length”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 101–104 ; Semiconductors, 51:1 (2017), 100–103 |
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2016 |
26. |
I. V. Altukhov, S. E. Dizhur, M. S. Kagan, S. K. Paprotskiy, N. A. Khval'kovskii, A. D. Buravlev, A. P. Vasil'ev, Yu. M. Zadiranov, N. D. Il'inskaya, A. A. Usikova, V. M. Ustinov, “Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016), 128–131 ; JETP Letters, 103:2 (2016), 122–124 |
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27. |
I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savel'ev, I. A. Nyapshaev, A. Yu. Egorov, “On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1429–1433 ; Semiconductors, 50:10 (2016), 1412–1415 |
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28. |
F. I. Zubov, N. V. Kryzhanovskaya, È. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maksimov, A. E. Zhukov, “Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1425–1428 ; Semiconductors, 50:10 (2016), 1408–1411 |
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29. |
M. A. Bobrov, N. A. Maleev, S. A. Blokhin, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, V. Lisak, V. M. Ustinov, “Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1408–1413 ; Semiconductors, 50:10 (2016), 1390–1395 |
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30. |
I. M. Gadzhiev, M. S. Buyalo, A. E. Gubenko, A. Yu. Egorov, A. A. Usikova, N. D. Il'inskaya, A. V. Lyutetskiy, Yu. M. Zadiranov, E. L. Portnoĭ, “Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 843–847 ; Semiconductors, 50:6 (2016), 828–831 |
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31. |
N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-$\mu$m spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 393–397 ; Semiconductors, 50:3 (2016), 390–393 |
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32. |
S. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, N. D. Prasolov, P. N. Brunkov, V. S. Levitskii, V. Lisak, N. A. Maleev, V. M. Ustinov, “A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 57–65 ; Tech. Phys. Lett., 42:10 (2016), 1049–1053 |
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33. |
S. A. Blokhin, N. V. Kryzhanovskaya, È. I. Moiseev, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, V. N. Nevedomskiy, E. V. Nikitina, N. A. Maleev, V. M. Ustinov, “Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79 ; Tech. Phys. Lett., 42:10 (2016), 1009–1012 |
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1988 |
34. |
Zh. I. Alferov, V. M. Andreev, K. I. Vakarelska, Yu. M. Zadiranov, V. R. Larionov, A. V. Nikitin, “THIN-FILM MULTITRANSIT ALGAAS-PHOTOELEMENTS WITH 2-SIDED
PHOTOSENSITIVITY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 193–197 |
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1987 |
35. |
Yu. M. Zadiranov, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, G. I. Tsvilev, “HIGH-VOLTAGE IMPULSE THYRISTORS ON THE BASIS OF WEAKLY ALLOYED
ARSENIDE-GALLIUM”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 771–777 |
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1986 |
36. |
B. I. Grigorev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, “On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1897–1900 |
37. |
B. I. Grigorev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, “Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 677–682 |
38. |
Zh. I. Alferov, V. M. Efanov, Yu. M. Zadiranov, A. F. Kardo-Sisoev, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, “Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986), 1281–1285 |
39. |
V. M. Andreev, A. B. Guchmazov, T. V. Dekal'chuk, Yu. M. Zadiranov, V. S. Kalinovskii, A. M. Koinova, “Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986), 719–723 |
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1984 |
40. |
Yu. M. Zadiranov, V. I. Korol'kov, V. G. Nikitin, A. V. Rozhkov, “POWERFUL IMPULSE TRANSISTORS BASED ON GALLIUM ARSENIDES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984), 976–979 |
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1983 |
41. |
V. M. Andreev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, A. A. Yakovenko, “Исследование транзисторов с оптической связью”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1618–1622 |
42. |
A. M. Allakhverdiev, Yu. M. Zadiranov, V. D. Rumancev, “Взаимное влияние широкозонного и узкозонного
фотоэлементов при работе каскадных $n$-GaAs${-}p$-AlGaAs${-}n$-AlGaAs-гетерофотопреобразователей”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 446–448 |
43. |
V. M. Andreev, Yu. M. Zadiranov, V. D. Rumancev, N. M. Saradzhishvili, O. V. Sulima, “Фотоэлектролюминесценция
в AlGaAs-гетероструктуpax”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983), 1058–1061 |
44. |
Yu. M. Zadiranov, V. I. Korol'kov, V. G. Nikitin, S. I. Ponomarev, A. V. Rozhkov, “Импульсные тиристоры на основе гетероструктур GaAs$-$AlGaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983), 652–655 |
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