Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1408–1413 (Mi phts6347)  

This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

M. A. Bobrova, N. A. Maleeva, S. A. Blokhina, A. G. Kuz'menkovab, A. A. Blokhina, A. P. Vasil'evab, Yu. A. Gusevaa, M. M. Kulaginaa, Yu. M. Zadiranova, S. I. Troshkova, V. Lisakac, V. M. Ustinovab

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (868 kB) Citations (5)
Abstract: The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [$\bar1$10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.
Received: 14.04.2016
Accepted: 20.04.2016
English version:
Semiconductors, 2016, Volume 50, Issue 10, Pages 1390–1395
DOI: https://doi.org/10.1134/S1063782616100092
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Bobrov, N. A. Maleev, S. A. Blokhin, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, V. Lisak, V. M. Ustinov, “Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1408–1413; Semiconductors, 50:10 (2016), 1390–1395
Citation in format AMSBIB
\Bibitem{BobMalBlo16}
\by M.~A.~Bobrov, N.~A.~Maleev, S.~A.~Blokhin, A.~G.~Kuz'menkov, A.~A.~Blokhin, A.~P.~Vasil'ev, Yu.~A.~Guseva, M.~M.~Kulagina, Yu.~M.~Zadiranov, S.~I.~Troshkov, V.~Lisak, V.~M.~Ustinov
\paper Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 10
\pages 1408--1413
\mathnet{http://mi.mathnet.ru/phts6347}
\elib{https://elibrary.ru/item.asp?id=27369021}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 10
\pages 1390--1395
\crossref{https://doi.org/10.1134/S1063782616100092}
Linking options:
  • https://www.mathnet.ru/eng/phts6347
  • https://www.mathnet.ru/eng/phts/v50/i10/p1408
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:50
    Full-text PDF :27
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024