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Publications in Math-Net.Ru |
Citations |
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2011 |
| 1. |
E. I. Davydova, V. V. Dmitriev, Yu. Yu. Kozlov, I. A. Kukushkin, M. B. Uspenskiy, V. A. Shishkin, “Increase in the optical damage threshold of a ZnSe-passivated front mirror of a laser diode”, Kvantovaya Elektronika, 41:5 (2011), 423–426   [Quantum Electron., 41:5 (2011), 423–426   ] |
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2010 |
| 2. |
A. A. Lobintsov, M. B. Uspenskiy, V. A. Shishkin, M. V. Shramenko, S. D. Yakubovich, “Highly efficient semiconductor optical amplifier for the 820—860-nm spectral range”, Kvantovaya Elektronika, 40:4 (2010), 305–309 [Quantum Electron., 40:4 (2010), 305–309 ] |
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2009 |
| 3. |
E. I. Davydova, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, A. V. Sukharev, M. B. Uspenskiy, V. A. Shishkin, “High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures”, Kvantovaya Elektronika, 39:1 (2009), 18–20 [Quantum Electron., 39:1 (2009), 18–20 ] |
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2005 |
| 4. |
A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin, “Effect of the energy of ion-chemical etching of GaAs/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As structures on photoluminescence and degradation of devices”, Kvantovaya Elektronika, 35:5 (2005), 445–448 [Quantum Electron., 35:5 (2005), 445–448 ] |
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2004 |
| 5. |
E. I. Davydova, A. V. Zubanov, A. A. Marmalyuk, M. B. Uspenskiy, V. A. Shishkin, “Single-mode ridge lasers fabricated in an inductively coupled plasma source”, Kvantovaya Elektronika, 34:9 (2004), 805–808 [Quantum Electron., 34:9 (2004), 805–808 ] |
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2001 |
| 6. |
A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 31:8 (2001), 659–660 [Quantum Electron., 31:8 (2001), 659–660 ] |
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1999 |
| 7. |
V. V. Bezotosnyi, E. I. Davydova, I. D. Zalevskii, V. P. Konyaev, A. A. Marmalyuk, A. A. Padalitsa, V. A. Shishkin, “Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the <i>p</i> — <i>n</i> junction”, Kvantovaya Elektronika, 27:1 (1999), 1–2 [Quantum Electron., 29:4 (1999), 283–284 ] |
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1996 |
| 8. |
V. P. Duraev, E. T. Nedelin, A. V. Mel'nikov, M. A. Sumarokov, V. A. Shishkin, “Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm”, Kvantovaya Elektronika, 23:9 (1996), 785–786 [Quantum Electron., 26:9 (1996), 765–766 ] |
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1994 |
| 9. |
O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin, “Single-frequency GaAIAs/GaAs lasers”, Kvantovaya Elektronika, 21:3 (1994), 205–208 [Quantum Electron., 24:3 (1994), 187–190 ] |
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1992 |
| 10. |
E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin, “Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region”, Kvantovaya Elektronika, 19:10 (1992), 1024–1031 [Sov J Quantum Electron, 22:10 (1992), 954–960 ] |
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