Abstract:
Lasers emitting at wavelengths of 780–850 nm with an output power up to 20 mW in the single-frequency regime were developed. At output powers up to 5 mW there was no mode 'hopping' and the experimental characteristics of the lasers agreed well with theoretical predictions. The minimum width of the emission line of these lasers was 35 MHz and the ratio of the powers of the lasing and adjacent modes exceeded 20 dB.
Citation:
O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin, “Single-frequency GaAIAs/GaAs lasers”, Kvantovaya Elektronika, 21:3 (1994), 205–208 [Quantum Electron., 24:3 (1994), 187–190]
Linking options:
https://www.mathnet.ru/eng/qe50
https://www.mathnet.ru/eng/qe/v21/i3/p205
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