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Kvantovaya Elektronika, 1994, Volume 21, Number 3, Pages 205–208 (Mi qe50)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Single-frequency GaAIAs/GaAs lasers

O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Full-text PDF (309 kB) Citations (1)
Abstract: Lasers emitting at wavelengths of 780–850 nm with an output power up to 20 mW in the single-frequency regime were developed. At output powers up to 5 mW there was no mode 'hopping' and the experimental characteristics of the lasers agreed well with theoretical predictions. The minimum width of the emission line of these lasers was 35 MHz and the ratio of the powers of the lasing and adjacent modes exceeded 20 dB.
Received: 27.04.1993
English version:
Quantum Electronics, 1994, Volume 24, Issue 3, Pages 187–190
DOI: https://doi.org/10.1070/QE1994v024n03ABEH000050
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.L
Language: Russian


Citation: O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin, “Single-frequency GaAIAs/GaAs lasers”, Kvantovaya Elektronika, 21:3 (1994), 205–208 [Quantum Electron., 24:3 (1994), 187–190]
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  • https://www.mathnet.ru/eng/qe50
  • https://www.mathnet.ru/eng/qe/v21/i3/p205
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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