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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Single-frequency GaAIAs/GaAs lasers
O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
Lasers emitting at wavelengths of 780–850 nm with an output power up to 20 mW in the single-frequency regime were developed. At output powers up to 5 mW there was no mode 'hopping' and the experimental characteristics of the lasers agreed well with theoretical predictions. The minimum width of the emission line of these lasers was 35 MHz and the ratio of the powers of the lasing and adjacent modes exceeded 20 dB.
Received: 27.04.1993
Citation:
O. V. Zhuravleva, N. N. Kiseleva, V. D. Kurnosov, O. Yu. Malashina, A. A. Chel'nyi, V. A. Shishkin, “Single-frequency GaAIAs/GaAs lasers”, Kvantovaya Elektronika, 21:3 (1994), 205–208 [Quantum Electron., 24:3 (1994), 187–190]
Linking options:
https://www.mathnet.ru/eng/qe50 https://www.mathnet.ru/eng/qe/v21/i3/p205
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Abstract page: | 111 | Full-text PDF : | 70 |
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