Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction

Strained double-sided AlGaAs/InGaAs/GaAs heterostructures emitting at a wavelength of 1.06 μm, with separate optical and electrical confinement, and containing two quantum wells, were developed. CW lasers with a stripe contact of 100 μm width having an output power up to 2 W and 20° — 25° divergence of the radiation in the plane perpendicular to the p — n junction were constructed from these heterostructures. The external differential quantum efficiency was 85% and the overall efficiency was 47% at the casing temperature of 20 °C. The efficiency of coupling the radiation into a standard fibre waveguide, with a core diameter of 50 μm and a numerical aperture of 0.22, was 80%.